Artificial Neuronal Devices Based on Emerging Materials: Neuronal Dynamics and Applications.
artificial neurons
brain emulation
neuromorphic computing
sensory neurons
spiking neural networks
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
Sep 2023
Sep 2023
Historique:
revised:
02
12
2022
received:
03
06
2022
medline:
15
9
2023
pubmed:
8
1
2023
entrez:
7
1
2023
Statut:
ppublish
Résumé
Artificial neuronal devices are critical building blocks of neuromorphic computing systems and currently the subject of intense research motivated by application needs from new computing technology and more realistic brain emulation. Researchers have proposed a range of device concepts that can mimic neuronal dynamics and functions. Although the switching physics and device structures of these artificial neurons are largely different, their behaviors can be described by several neuron models in a more unified manner. In this paper, the reports of artificial neuronal devices based on emerging volatile switching materials are reviewed from the perspective of the demonstrated neuron models, with a focus on the neuronal functions implemented in these devices and the exploitation of these functions for computational and sensing applications. Furthermore, the neuroscience inspirations and engineering methods to enrich the neuronal dynamics that remain to be implemented in artificial neuronal devices and networks toward realizing the full functionalities of biological neurons are discussed.
Identifiants
pubmed: 36609920
doi: 10.1002/adma.202205047
doi:
Types de publication
Journal Article
Review
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2205047Subventions
Organisme : Army Research Office
ID : W911NF1810268
Organisme : National Science Foundation
ID : CMMI-2240407
Organisme : National Science Foundation
ID : ECCS-2045001
Organisme : National Natural Science Foundation of China
ID : 51825302
Organisme : National Natural Science Foundation of China
ID : 51802202
Organisme : National Natural Science Foundation of China
ID : 21807074
Organisme : Natural Science Foundation of Chongqing
ID : cstc2021jcyj-cxttX0002
Organisme : Chongqing Talents: Youth Top-notch Talent Project
ID : cstc2022ycjh-bgzxm0167
Informations de copyright
© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
Références
P. A. Merolla, J. V. Arthur, R. Alvarez-Icaza, A. S. Cassidy, J. Sawada, F. Akopyan, B. L. Jackson, N. Imam, C. Guo, Y. Nakamura, Science 2014, 345, 668.
a) J.-s. Seo, B. Brezzo, Y. Liu, B. D. Parker, S. K. Esser, R. K. Montoye, B. Rajendran, J. A. Tierno, L. Chang, D. S. Modha, presented at 2011 IEEE Custom Integrated Circuits Conf. (CICC), San Jose, CA, USA, September 2011;
b) I. Sourikopoulos, S. Hedayat, C. Loyez, F. Danneville, V. Hoel, E. Mercier, A. Cappy, Front Neurosci. 2017, 11, 123.
a) J. Zhu, T. Zhang, Y. Yang, R. Huang, Appl. Phys. Rev. 2020, 7, 011312;
b) G. Lee, J. H. Baek, F. Ren, S. J. Pearton, G. H. Lee, J. Kim, Small 2021, 17, 2100640.
a) D. B. Strukov, G. S. Snider, D. R. Stewart, R. S. Williams, Nature 2008, 453, 80;
b) S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, W. Lu, Nano Lett. 2010, 10, 1297.
a) M. Suri, O. Bichler, D. Querlioz, O. Cueto, L. Perniola, V. Sousa, D. Vuillaume, C. Gamrat, B. DeSalvo, presented at 2011 Int. Electron Devices Meeting, Washington, DC, USA, December 2011;
b) M. Suri, O. Bichler, D. Querlioz, B. Traoré, O. Cueto, L. Perniola, V. Sousa, D. Vuillaume, C. Gamrat, B. DeSalvo, J. Appl. Phys. 2012, 112, 054904.
A. F. Vincent, J. Larroque, N. Locatelli, N. B. Romdhane, O. Bichler, C. Gamrat, W. S. Zhao, J.-O. Klein, S. Galdin-Retailleau, D. Querlioz, IEEE Trans. Biomed. Circuits Syst. 2015, 9, 166.
a) J. Tang, F. Yuan, X. Shen, Z. Wang, M. Rao, Y. He, Y. Sun, X. Li, W. Zhang, Y. Li, Adv. Mater. 2019, 31, 1902761;
b) M. A. Zidan, Y. Jeong, J. Lee, B. Chen, S. Huang, M. J. Kushner, W. D. Lu, Nat. Electron. 2018, 1, 411;
c) F. M. Bayat, M. Prezioso, B. Chakrabarti, H. Nili, I. Kataeva, D. Strukov, Nat. Commun. 2018, 9, 2331;
d) P. Yao, H. Wu, B. Gao, J. Tang, Q. Zhang, W. Zhang, J. J. Yang, H. Qian, Nature 2020, 577, 641.
a) M. D. Pickett, G. Medeiros-Ribeiro, R. S. Williams, Nat. Mater. 2013, 12, 114;
b) L. Gao, P.-Y. Chen, S. Yu, Appl. Phys. Lett. 2017, 111, 103503;
c) K. Moon, E. Cha, J. Park, S. Gi, M. Chu, K. Baek, B. Lee, S. Oh, H. Hwang, presented at 2015 IEEE Int. Electron Devices Meeting (IEDM), Washington, DC, USA, December 2015.
a) T. C. Jackson, A. A. Sharma, J. A. Bain, J. A. Weldon, L. Pileggi, IEEE J Emerging Sel. Top. Circuits Syst. 2015, 5, 230;
b) A. A. Sharma, Y. Li, M. Skowronski, J. A. Bain, J. A. Weldon, IEEE Trans. Electron Devices 2015, 62, 3857;
c) Z. Wang, S. Joshi, S. E. Savel'ev, H. Jiang, R. Midya, P. Lin, M. Hu, N. Ge, J. P. Strachan, Z. Li, Nat. Mater. 2017, 16, 101.
a) T. Tuma, A. Pantazi, M. L. Gallo, A. Sebastian, E. Eleftheriou, Nat. Nanotechnol. 2016, 11, 693;
b) I. Chakraborty, G. Saha, A. Sengupta, K. Roy, Sci. Rep. 2018, 8, 12980;
c) C. D. Wright, P. Hosseini, J. A. V. Diosdado, Adv. Funct. Mater. 2013, 23, 2248.
a) M. Sharad, C. Augustine, G. Panagopoulos, K. Roy, presented at 2012 IEEE/ACM Int. Symp. on Nanoscale Architectures (NANOARCH), Amsterdam, Netherlands, July 2012;
b) M. Sharad, D. Fan, K. Roy, J. Appl. Phys. 2013, 114, 234906;
c) A. Sengupta, S. H. Choday, Y. Kim, K. Roy, Appl. Phys. Lett. 2015, 106, 143701;
d) J. Torrejon, M. Riou, F. A. Araujo, S. Tsunegi, G. Khalsa, D. Querlioz, P. Bortolotti, V. Cros, K. Yakushiji, A. Fukushima, Nature 2017, 547, 428.
a) S. Li, W. Kang, Y. Huang, X. Zhang, Y. Zhou, W. Zhao, Nanotechnology 2017, 28, 31LT01;
b) X. Chen, W. Kang, D. Zhu, X. Zhang, N. Lei, Y. Zhang, Y. Zhou, W. Zhao, Nanoscale 2018, 10, 6139;
c) X. Liang, X. Zhang, J. Xia, M. Ezawa, Y. Zhao, G. Zhao, Y. Zhou, Appl. Phys. Lett. 2020, 116, 122402;
d) N. Bindal, C. A. C. Ian, W. S. Lew, B. K. Kaushik, Nanotechnology 2021, 32, 215204.
a) Z. Wang, B. Crafton, J. Gomez, R. Xu, A. Luo, Z. Krivokapic, L. Martin, S. Datta, A. Raychowdhury, A. I. Khan, presented at 2018 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 2018;
b) H. Mulaosmanovic, E. Chicca, M. Bertele, T. Mikolajick, S. Slesazeck, Nanoscale 2018, 10, 21755;
c) C. Chen, M. Yang, S. Liu, T. Liu, K. Zhu, Y. Zhao, H. Wang, Q. Huang, R. Huang, presented at 2019 Symp. on VLSI Technology, Tokyo, Japan, June 2019.
E. Toomey, K. Segall, M. Castellani, M. Colangelo, N. Lynch, K. K. Berggren, Nano Lett. 2020, 20, 8059.
a) S. Choi, J. Yang, G. Wang, Adv. Mater. 2020, 32, 2004659;
b) H. Bian, Y. Y. Goh, Y. Liu, H. Ling, L. Xie, X. Liu, Adv. Mater. 2021, 33, 2006469.
D. Purves, G. J. Augustine, D. Fitzpatrick, W. Hall, A.-S. LaMantia, L. White, Neurosciences, De Boeck Supérieur, Louvain-la-Neuve 2019.
a) A. Sengupta, P. Panda, P. Wijesinghe, Y. Kim, K. Roy, Sci. Rep. 2016, 6, 30039;
b) M. Jerry, A. Parihar, B. Grisafe, A. Raychowdhury, S. Datta, presented at 2017 Symp. on VLSI Technology, Kyoto, Japan, June 2017;
c) S. Kumar, J. P. Strachan, R. S. Williams, Nature 2017, 548, 318.
a) D. S. Jeong, C. S. Hwang, Adv. Mater. 2018, 30, 1704729;
b) C.-H. Kim, S. Lim, S. Y. Woo, W.-M. Kang, Y.-T. Seo, S.-T. Lee, S. Lee, D. Kwon, S. Oh, Y. Noh, Nanotechnology 2018, 30, 032001;
c) H.-M. Huang, Z. Wang, T. Wang, Y. Xiao, X. Guo, Adv. Intell. Syst. 2020, 2, 2000149.
a) M. F. Bear, B. W. Connors, M. A. Paradiso, Neuroscience, Vol. 2, Lippincott Williams & Wilkins, Philadelphia 2007;
b) E. R. Kandel, J. H. Schwartz, T. M. Jessell, D. o. Biochemistry, M. B. T. Jessell, S. Siegelbaum, A. Hudspeth, Principles of Neural Science, Vol. 4, McGraw-Hill, New York 2000.
a) E. T. Rolls, G. Deco, The Noisy Brain: Stochastic Dynamics as a Principle of Brain Function, Vol. 34, Oxford University Press, Oxford 2010;
b) G. Deco, E. T. Rolls, R. Romo, Prog. Neurobiol. 2009, 88, 1.
a) J. J. Hopfield, Proc. Natl. Acad. Sci. U. S. A. 1982, 79, 2554;
b) W. Maass, Neural Networks 1997, 10, 1659;
c) R. Zand, K. Y. Camsari, S. D. Pyle, I. Ahmed, C. H. Kim, R. F. DeMara, presented at Proceedings of the 2018 on Great Lakes Symp. on VLSI, Chicago, IL, USA, May 2018.
E. Schneidman, I. Segev, N. Tishby, presented at Advances in Neural Information Processing Systems, Denver, CO, USA, December 2000.
A. H. Zhang, G. Sharma, E. A. Undheim, X. Jia, M. Mobli, Neurosci. Lett. 2018, 679, 35.
a) Z. Wang, S. Joshi, S. Savel'ev, W. Song, R. Midya, Y. Li, M. Rao, P. Yan, S. Asapu, Y. Zhuo, H. Jiang, P. Lin, C. Li, J. H. Yoon, N. K. Upadhyay, J. Zhang, M. Hu, J. P. Strachan, M. Barnell, Q. Wu, H. Wu, R. S. Williams, Q. Xia, J. J. Yang, Nat. Electron. 2018, 1, 137;
b) Q. Duan, Z. Jing, X. Zou, Y. Wang, K. Yang, T. Zhang, S. Wu, R. Huang, Y. Yang, Nat. Commun. 2020, 11, 3399;
c) X. Li, J. Tang, Q. Zhang, B. Gao, J. J. Yang, S. Song, W. Wu, W. Zhang, P. Yao, N. Deng, Nat. Nanotechnol. 2020, 15, 776.
a) A. Parihar, N. Shukla, M. Jerry, S. Datta, A. Raychowdhury, Sci. Rep. 2017, 7, 911;
b) S. Dutta, A. Khanna, A. Assoa, H. Paik, D. Schlom, Z. Toroczkai, A. Raychowdhury, S. Datta, Nat. Electron. 2021, 4, 502;
c) S. Dutta, A. Parihar, A. Khanna, J. Gomez, W. Chakraborty, M. Jerry, B. Grisafe, A. Raychowdhury, S. Datta, Nat. Commun. 2019, 10, 3299.
a) X. Yan, J. Ma, T. Wu, A. Zhang, J. Wu, M. Chin, Z. Zhang, M. Dubey, W. Wu, M. S.-W. Chen, Nat. Commun. 2021, 12, 5710;
b) W. A. Borders, A. Z. Pervaiz, S. Fukami, K. Y. Camsari, H. Ohno, S. Datta, Nature 2019, 573, 390.
a) P. Debashis, V. Ostwal, R. Faria, S. Datta, J. Appenzeller, Z. Chen, Sci. Rep. 2020, 10, 16002;
b) S. Choi, G. S. Kim, J. Yang, H. Cho, C. Y. Kang, G. Wang, Adv. Mater. 2022, 34, 2104598.
a) B. Lalevic, M. Shoga, Thin Solid Films 1981, 75, 199;
b) S. Kumar, Z. Wang, N. Davila, N. Kumari, K. J. Norris, X. Huang, J. P. Strachan, D. Vine, A. Kilcoyne, Y. Nishi, Nat. Commun. 2017, 8, 658.
Y. Taketa, F. Kato, M. Nitta, M. Haradome, Appl. Phys. Lett. 1975, 27, 212.
G. Liu, B. Debnath, T. R. Pope, T. T. Salguero, R. K. Lake, A. A. Balandin, Nat. Nanotechnol. 2016, 11, 845.
J. Wang, S. Hu, X. Zhan, Q. Yu, Z. Liu, T. P. Chen, Y. Yin, S. Hosaka, Y. Liu, Sci. Rep. 2018, 8, 12546.
a) S. Lashkare, S. Chouhan, T. Chavan, A. Bhat, P. Kumbhare, U. Ganguly, IEEE Electron Device Lett. 2018, 39, 484;
b) S. Lashkare, P. Kumbhare, V. Saraswat, U. Ganguly, IEEE Electron Device Lett. 2018, 39, 1437.
Y. Yang, H. Li, Adv. Electron. Mater. 2022, 8, 2200094.
M. Lee, S. W. Cho, S. J. Kim, J. Y. Kwak, H. Ju, Y. Yi, B.-k. Cheong, S. Lee, Phys. Rev. Appl. 2020, 13, 064056.
Z. Wang, S. Khandelwal, A. I. Khan, IEEE Electron Device Lett. 2017, 38, 1614.
a) R. Khymyn, I. Lisenkov, J. Voorheis, O. Sulymenko, O. Prokopenko, V. Tiberkevich, J. Akerman, A. Slavin, Sci. Rep. 2018, 8, 15727;
b) P. Villard, U. Ebels, D. Houssameddine, J. Katine, D. Mauri, B. Delaet, P. Vincent, M.-C. Cyrille, B. Viala, J.-P. Michel, IEEE J. Solid-State Circuits 2009, 45, 214.
X. Zhang, Y. Zhuo, Q. Luo, Z. Wu, R. Midya, Z. Wang, W. Song, R. Wang, N. K. Upadhyay, Y. Fang, Nat. Commun. 2020, 11, 51.
G. Kim, J. H. In, Y. S. Kim, H. Rhee, W. Park, H. Song, J. Park, K. M. Kim, Nat. Commun. 2021, 12, 2906.
H. Liu, T. Wu, X. Yan, J. Wu, N. Wang, Z. Du, H. Yang, B. Chen, Z. Zhang, F. Liu, Nano Lett. 2021, 21, 3465.
Y. Yu, B. Zhao, J. M. Goodwill, Y. Ma, J. A. Bain, M. Skowronski, ACS Appl. Electron. Mater. 2020, 2, 683.
H. Lin, C. Wang, Q. Deng, C. Xu, Z. Deng, C. Zhou, Nonlinear Dyn. 2021, 106, 959.
a) P. Stoliar, J. Tranchant, B. Corraze, E. Janod, M. P. Besland, F. Tesler, M. Rozenberg, L. Cario, Adv. Funct. Mater. 2017, 27, 1604740;
b) C. Adda, B. Corraze, P. Stoliar, P. Diener, J. Tranchant, A. Filatre-Furcate, M. Fourmigué, D. Lorcy, M.-P. Besland, E. Janod, J. Appl. Phys. 2018, 124, 152124.
a) J. H. Yoon, Z. Wang, K. M. Kim, H. Wu, V. Ravichandran, Q. Xia, C. S. Hwang, J. J. Yang, Nat. Commun. 2018, 9, 417;
b) Z. Wang, M. Rao, J.-W. Han, J. Zhang, P. Lin, Y. Li, C. Li, W. Song, S. Asapu, R. Midya, Nat. Commun. 2018, 9, 3208.
a) G. Palma, M. Suri, D. Querlioz, E. Vianello, B. De Salvo, presented at 2013 IEEE/ACM Int. Symp. on Nanoscale Architectures (NANOARCH), New York, NY, USA, July 2013;
b) X. Zheng, X. Li, J. Tang, B. Gao, H. Qian, H. Wu, presented at 2021 5th IEEE Electron Devices Technology & Manufacturing Conf. (EDTM), Chengdu, China, April 2021.
T. Danz, T. Domröse, C. Ropers, Science 2021, 371, 371.
J. Cai, B. Fang, L. Zhang, W. Lv, B. Zhang, T. Zhou, G. Finocchio, Z. Zeng, Phys. Rev. Appl. 2019, 11, 034015.
a) A. Sengupta, G. Srinivasan, D. Roy, K. Roy, presented at 2018 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 2018;
b) Z.-x. Li, X.-y. Geng, J. Wang, F. Zhuge, Front. Neurosci. 2021, 15, 997;
c) A. Mizrahi, T. Hirtzlin, A. Fukushima, H. Kubota, S. Yuasa, J. Grollier, D. Querlioz, Nat. Commun. 2018, 9, 1533.
a) A. Z. Pervaiz, L. A. Ghantasala, K. Y. Camsari, S. Datta, Sci. Rep. 2017, 7, 10994;
b) V. Ostwal, P. Debashis, R. Faria, Z. Chen, J. Appenzeller, Sci. Rep. 2018, 8, 16689.
S. Dutta, C. Schafer, J. Gomez, K. Ni, S. Joshi, S. Datta, Front. Neurosci. 2020, 14, 634.
a) N. Shukla, S. Datta, A. Parihar, A. Raychowdhury, in Future Trends in Microelectronics: Journey into the Unknown, Wiley, New York 2016, pp. 147-156;
b) E. Vassilieva, G. Pinto, J. A. De Barros, P. Suppes, IEEE Trans. Neural Networks 2010, 22, 84.
G. Csaba, W. Porod, Appl. Phys. Rev. 2020, 7, 011302.
G. Csaba, A. Raychowdhury, S. Datta, W. Porod, presented at 2018 IEEE Int. Symp. on Circuits and Systems (ISCAS), Florence, Italy, May 2018.
a) T. C. Jackson, A. A. Sharma, J. A. Bain, J. A. Weldon, L. Pileggi, presented at 2015 IEEE 6th Latin American Symp. on Circuits & Systems (LASCAS), Montevideo, Uruguay, February 2015;
b) A. A. Sharma, J. A. Bain, J. A. Weldon, IEEE J. Explor. Solid-State Comput. Devices Circuits 2015, 1, 58.
a) A. Raychowdhury, A. Parihar, G. H. Smith, V. Narayanan, G. Csaba, M. Jerry, W. Porod, S. Datta, Proc. IEEE 2018, 107, 73;
b) A. Velichko, M. Belyaev, V. Putrolaynen, A. Pergament, V. Perminov, Int. J. Mod. Phys. B 2017, 31, 1650261;
c) E. Corti, A. Khanna, K. Niang, J. Robertson, K. E. Moselund, B. Gotsmann, S. Datta, S. Karg, IEEE Electron Device Lett. 2020, 41, 629;
d) J. Lin, S. Guha, S. Ramanathan, Front. Neurosci. 2018, 12, 856.
a) K. Yogendra, D. Fan, K. Roy, IEEE Trans. Magn. 2015, 51, 4003909;
b) M. Romera, P. Talatchian, S. Tsunegi, K. Yakushiji, A. Fukushima, H. Kubota, S. Yuasa, V. Cros, P. Bortolotti, M. Ernoult, Nat. Commun. 2022, 13, 883.
E. Yu, A. Agrawal, D. Zheng, M. Si, M. Koo, D. Y. Peide, S. K. Gupta, K. Roy, IEEE Electron Device Lett. 2021, 42, 1670.
a) C. Du, F. Cai, M. A. Zidan, W. Ma, S. H. Lee, W. D. Lu, Nat. Commun. 2017, 8, 2204;
b) J. Moon, W. Ma, J. H. Shin, F. Cai, C. Du, S. H. Lee, W. D. Lu, Nat. Electron. 2019, 2, 480.
M. Romera, P. Talatchian, S. Tsunegi, F. A. Araujo, V. Cros, P. Bortolotti, J. Trastoy, K. Yakushiji, A. Fukushima, H. Kubota, Nature 2018, 563, 230.
M. Koo, M. Pufall, Y. Shim, A. B. Kos, G. Csaba, W. Porod, W. Rippard, K. Roy, Phys. Rev. Appl. 2020, 14, 034001.
N. Shukla, W.-Y. Tsai, M. Jerry, M. Barth, V. Narayanan, S. Datta, presented at 2016 IEEE Symp. on VLSI Technology, Honolulu, HI, USA, June 2016.
G. F. Newell, E. W. Montroll, Rev. Modern Phys. 1953, 25, 353.
a) W. Gerstner, W. M. Kistler, Spiking Neuron Models: Single Neurons, Populations, Plasticity, Cambridge University Press, Cambridge 2002;
b) A. N. Burkitt, Biol. Cybern. 2006, 95, 97.
L. F. Abbott, Brain Res. Bull. 1999, 50, 303.
a) D. Lee, M. Kwak, K. Moon, W. Choi, J. Park, J. Yoo, J. Song, S. Lim, C. Sung, W. Banerjee, Adv. Electron. Mater. 2019, 5, 1800866;
b) H. Lim, H.-W. Ahn, V. Kornijcuk, G. Kim, J. Y. Seok, I. Kim, C. S. Hwang, D. S. Jeong, Nanoscale 2016, 8, 9629;
c) S. Jia, H. Li, T. Gotoh, C. Longeaud, B. Zhang, J. Lyu, S. Lv, M. Zhu, Z. Song, Q. Liu, Nat. Commun. 2020, 11, 4636.
a) Y.-F. Lu, Y. Li, H. Li, T.-Q. Wan, X. Huang, Y.-H. He, X. Miao, IEEE Electron Device Lett. 2020, 41, 1245;
b) K. Wang, Q. Hu, B. Gao, Q. Lin, F.-W. Zhuge, D.-Y. Zhang, L. Wang, Y.-H. He, R. H. Scheicher, H. Tong, Mater. Horiz. 2021, 8, 619;
c) X. Zhang, W. Wang, Q. Liu, X. Zhao, J. Wei, R. Cao, Z. Yao, X. Zhu, F. Zhang, H. Lv, IEEE Electron Device Lett. 2017, 39, 308;
d) Y. Zhang, W. He, Y. Wu, K. Huang, Y. Shen, J. Su, Y. Wang, Z. Zhang, X. Ji, G. Li, Small 2018, 14, 1802188;
e) L. Yan, Y. Pei, J. Wang, H. He, Y. Zhao, X. Li, Y. Wei, X. Yan, Appl. Phys. Lett. 2021, 119, 153507.
a) H. Kalita, A. Krishnaprasad, N. Choudhary, S. Das, H.-S. Chung, Y. Jung, T. Roy, presented at 2018 76th Device Research Conf. (DRC), Santa Barbara, CA, USA, June 2018;
b) H. Kalita, A. Krishnaprasad, N. Choudhary, S. Das, D. Dev, Y. Ding, L. Tetard, H.-S. Chung, Y. Jung, T. Roy, Sci. Rep. 2019, 9, 53;
c) L. Bao, J. Zhu, Z. Yu, R. Jia, Q. Cai, Z. Wang, L. Xu, Y. Wu, Y. Yang, Y. Cai, ACS Appl. Mater. Interfaces 2019, 11, 41482;
d) D. Dev, A. Krishnaprasad, M. S. Shawkat, Z. He, S. Das, D. Fan, H.-S. Chung, Y. Jung, T. Roy, IEEE Electron Device Lett. 2020, 41, 936;
e) C. J. Wan, L. Q. Zhu, Y. H. Liu, P. Feng, Z. P. Liu, H. L. Cao, P. Xiao, Y. Shi, Q. Wan, Adv. Mater. 2016, 28, 3557;
f) D. Dev, M. S. Shawkat, A. Krishnaprasad, Y. Jung, T. Roy, IEEE Electron Device Lett. 2020, 41, 1440.
a) D. W. Kim, W. S. Yi, J. Y. Choi, K. Ashiba, J. U. Baek, H. S. Jun, J. J. Kim, J. G. Park, Front. Neurosci. 2020, 14, 309;
b) A. Jaiswal, S. Roy, G. Srinivasan, K. Roy, IEEE Trans. Electron Devices 2017, 64, 1818.
a) S. Lashkare, S. Chouhan, T. Chavan, A. Bhat, P. Kumbhare, U. Ganguly, IEEE Electron Device Lett. 2018, 39, 484;
b) J. Woo, D. Lee, Y. Koo, H. Hwang, Microelectron. Eng. 2017, 182, 42.
a) Y. Chen, Y. Wang, Y. Luo, X. Liu, Y. Wang, F. Gao, J. Xu, E. Hu, S. Samanta, X. Wan, IEEE Electron Device Lett. 2019, 40, 1686;
b) S. Hao, X. Ji, S. Zhong, K. Y. Pang, K. G. Lim, T. C. Chong, R. Zhao, Adv. Electron. Mater. 2020, 6, 1901335;
c) P. Bousoulas, M. Panagopoulou, N. Boukos, D. Tsoukalas, J. Phys. D: Appl. Phys. 2021, 54, 225303;
d) Y. Xu, H. Wang, D. Ye, R. Yang, Y. Huang, X. Miao, IEEE Electron Device Lett. 2021, 43, 116;
e) T. Fu, X. Liu, H. Gao, J. E. Ward, X. Liu, B. Yin, Z. Wang, Y. Zhuo, D. J. Walker, J. J. Yang, Nat. Commun. 2020, 11, 1861;
f) B. Dang, K. Liu, J. Zhu, L. Xu, T. Zhang, C. Cheng, H. Wang, Y. Yang, Y. Hao, R. Huang, APL Mater. 2019, 7, 071114.
a) T. Roy, M. Tosun, X. Cao, H. Fang, D.-H. Lien, P. Zhao, Y.-Z. Chen, Y.-L. Chueh, J. Guo, A. Javey, ACS Nano 2015, 9, 2071;
b) S. Kim, D. G. Roe, Y. Y. Choi, H. Woo, J. Park, J. I. Lee, Y. Choi, S. B. Jo, M. S. Kang, Y. J. Song, Sci. Adv. 2021, 7, eabe3996;
c) J. Guo, Y. Liu, F. Zhou, F. Li, Y. Li, F. Huang, Adv. Funct. Mater. 2021, 31, 2102015.
T. Kim, S. H. Kim, J. H. Park, J. Park, E. Park, S. G. Kim, H. Y. Yu, Adv. Electron. Mater. 2021, 7, 2000410.
A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, H. Ohno, Adv. Mater. 2019, 31, 1900636.
a) S. Liu, C. H. Bennett, J. S. Friedman, M. J. Marinella, D. Paydarfar, J. A. C. Incorvia, IEEE Magn. Lett. 2021, 12, 4500805;
b) W. H. Brigner, X. Hu, N. Hassan, C. H. Bennett, J. A. C. Incorvia, F. Garcia-Sanchez, J. S. Friedman, IEEE J. Explor. Solid-State Comput. Devices Circuits 2019, 5, 19;
c) W. H. Brigner, N. Hassan, L. Jiang-Wei, X. Hu, D. Saha, C. H. Bennett, M. J. Marinella, J. A. C. Incorvia, F. Garcia-Sanchez, J. S. Friedman, IEEE Trans. Electron Devices 2019, 66, 4970.
a) J. D. Valle, P. Salev, Y. Kalcheim, I. K. Schuller, Sci. Rep. 2020, 10, 4292;
b) S. Oh, Y. Shi, J. D. Valle, P. Salev, Y. Lu, Z. Huang, Y. Kalcheim, I. K. Schuller, D. Kuzum, Nat. Nanotechnol. 2021, 16, 680.
J. Wang, C. Teng, Z. Zhang, W. Chen, J. Tan, Y. Pan, R. Zhang, H. Zhou, B. Ding, H.-M. Cheng, ACS Nano 2021, 15, 15123.
D. H. Perkel, G. L. Gerstein, G. P. Moore, Biophys. J. 1967, 7, 391.
W. J. Ma, J. M. Beck, P. E. Latham, A. Pouget, Nat. Neurosci. 2006, 9, 1432.
A. Dodda, S. J. A. n. Das, ACS Nano 2021, 15, 16172.
a) D. C. Knill, A. Pouget, Trends Neurosci. 2004, 27, 712;
b) L. Aitchison, M. Lengyel, Curr. Opin. Neurobiol. 2017, 46, 219.
D. W. Kim, D. S. Woo, H. J. Kim, S. M. Jin, S. M. Jung, D. E. Kim, J. J. Kim, T. H. Shim, J. G. Park, Adv. Electron. Mater. 2022, 8, 2101356.
B. Hille, Biophys. J. 1978, 22, 283.
a) A. L. Hodgkin, A. F. Huxley, J. Physiol. 1952, 117, 500;
b) J. Cronin, J. C. Boutelle, Mathematical Aspects of Hodgkin-Huxley Neural Theory, Cambridge University Press, Cambridge 1987.
L. Chua, Nanotechnology 2013, 24, 383001.
W. Yi, K. K. Tsang, S. K. Lam, X. Bai, J. A. Crowell, E. A. Flores, Nat. Commun. 2018, 9, 4661.
Q. Ma, M. R. Haider, V. L. Shrestha, Y. Massoud, Analog Integr. Circuits Signal Process. 2012, 73, 329.
a) A. Moujahid, A. d'Anjou, F. Torrealdea, F. Torrealdea, Phys. Rev. E 2011, 83, 031912;
b) Y. Wang, R. Wang, X. Xu, Neural Plast. 2017, 2017, 6207141;
c) F. Zhu, R. Wang, X. Pan, Z. Zhu, Cognit. Neurodyn. 2019, 13, 75;
d) A. Payeur, J. Guerguiev, F. Zenke, B. A. Richards, R. Naud, Nat. Neurosci. 2021, 24, 1010.
H. M. Huang, R. Yang, Z. H. Tan, H. K. He, W. Zhou, J. Xiong, X. Guo, Adv. Mater. 2019, 31, 1803849.
M. D. Pickett, R. S. Williams, Nanotechnology 2013, 24, 384002.
S. Kumar, R. S. Williams, Z. Wang, Nature 2020, 585, 518.
a) V. E. Abraira, D. D. Ginty, Neuron 2013, 79, 618;
b) E. A. Lumpkin, M. J. Caterina, Nature 2007, 445, 858.
M. A. Zidan, J. P. Strachan, W. D. Lu, Nat. Electron. 2018, 1, 22.
a) W. Chen, Z. Zhang, G. Liu, iScience 2022, 25, 103729;
b) W. Pan, J. Zheng, L. Wang, Y. Luo, Engineering 2022, 14, 19.
a) F. Zhou, Y. Chai, Nat. Electron. 2020, 3, 664;
b) M. Wang, Y. Luo, T. Wang, C. Wan, L. Pan, S. Pan, K. He, A. Neo, X. Chen, Adv. Mater. 2021, 33, 2003014.
a) F. Zhou, Z. Zhou, J. Chen, T. H. Choy, J. Wang, N. Zhang, Z. Lin, S. Yu, J. Kang, H. P. Wong, Y. Chai, Nat. Nanotechnol. 2019, 14, 776;
b) C.-Y. Wang, S.-J. Liang, S. Wang, P. Wang, Z. a. Li, Z. Wang, A. Gao, C. Pan, C. Liu, J. Liu, H. Yang, X. Liu, W. Song, C. Wang, B. Cheng, X. Wang, K. Chen, Z. Wang, K. Watanabe, T. Taniguchi, J. J. Yang, F. Miao, Sci. Adv. 2020, 6, eaba6173;
c) Y. Lee, J. Y. Oh, W. Xu, O. Kim, T. R. Kim, J. Kang, Y. Kim, D. Son, J. B.-H. Tok, M. J. Park, Z. Bao, T.-W. Lee, Sci. Adv. 2018, 4, eaat7387;
d) S. Seo, S. H. Jo, S. Kim, J. Shim, S. Oh, J. H. Kim, K. Heo, J. W. Choi, C. Choi, S. Oh, D. Kuzum, H. P. Wong, J. H. Park, Nat. Commun. 2018, 9, 5106.
L. Bao, J. Kang, Y. Fang, Z. Yu, Z. Wang, Y. Yang, Y. Cai, R. Huang, Sci. Rep. 2018, 8, 13727.
Q. Wu, B. Dang, C. Lu, G. Xu, G. Yang, J. Wang, X. Chuai, N. Lu, D. Geng, H. Wang, L. Li, Nano Lett. 2020, 20, 8015.
B. Mu, L. Guo, J. Liao, P. Xie, G. Ding, Z. Lv, Y. Zhou, S. T. Han, Y. Yan, Small 2021, 17, 2103837.
C. Chen, Y. He, H. Mao, L. Zhu, X. Wang, Y. Zhu, Y. Zhu, Y. Shi, C. Wan, Q. Wan, Adv. Mater. 2022, 34, 2201895.
J. K. Han, D. M. Geum, M. W. Lee, J. M. Yu, S. K. Kim, S. Kim, Y. K. Choi, Nano Lett. 2020, 20, 8781.
J.-K. Han, J. Sim, D.-M. Geum, S. K. Kim, J.-M. Yu, J. Kim, S. Kim, Y.-K. Choi, presented at 2021 IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 2021.
L. Mennel, J. Symonowicz, S. Wachter, D. K. Polyushkin, A. J. Molina-Mendoza, T. Mueller, Nature 2020, 579, 62.
Z. Zhang, S. Wang, C. Liu, R. Xie, W. Hu, P. Zhou, Nat. Nanotechnol. 2022, 17, 27.
S. Lee, R. Peng, C. Wu, M. Li, Nat. Commun. 2022, 13, 1485.
A. Zimmerman, L. Bai, D. D. Ginty1, J. Y. Oh, Science 2014, 346, 950.
B. Zhu, H. Wang, Y. Liu, D. Qi, Z. Liu, H. Wang, J. Yu, M. Sherburne, Z. Wang, X. Chen, Adv. Mater. 2016, 28, 1559.
a) Y. Zang, H. Shen, D. Huang, C. A. Di, D. Zhu, Adv. Mater. 2017, 29, 1606088;
b) Q. Xia, Y. Qin, A. Zheng, P. Qiu, X. Zhang, Adv. Mater. Interfaces 2021, 8, 2101068.
C. Zhang, W. B. Ye, K. Zhou, H. Y. Chen, J. Q. Yang, G. Ding, X. Chen, Y. Zhou, L. Zhou, F. Li, S. T. Han, Adv. Funct. Mater. 2019, 29, 1808783.
C. Wan, G. Chen, Y. Fu, M. Wang, N. Matsuhisa, S. Pan, L. Pan, H. Yang, Q. Wan, L. Zhu, X. Chen, Adv. Mater. 2018, 30, 1801291.
S. Kim, Y. Lee, H.-D. Kim, S.-J. Choi, NPG Asia Mater. 2020, 12, 76.
F. Yu, J. C. Cai, L. Q. Zhu, M. Sheikhi, Y. H. Zeng, W. Guo, Z. Y. Ren, H. Xiao, J. C. Ye, C. H. Lin, A. B. Wong, T. Wu, ACS Appl. Mater. Interfaces 2020, 12, 26258.
J. Zhu, X. Zhang, M. Wang, R. Wang, P. Chen, L. Cheng, Q. Liu, IEEE Electron Device Lett. 2022, 43, 962.
a) Y. Kim, A. Chortos, W. Xu, Y. Liu, J. Y. Oh, D. Son, J. Kang, A. M. Foudeh, C. Zhu, Y. Lee, Science 2018, 360, 998;
b) H. Tan, Q. Tao, I. Pande, S. Majumdar, F. Liu, Y. Zhou, P. O. Persson, J. Rosen, S. van Dijken, Nat. Commun. 2020, 11, 1369.
C. Wan, P. Cai, X. Guo, M. Wang, N. Matsuhisa, L. Yang, Z. Lv, Y. Luo, X. J. Loh, X. Chen, Nat. Commun. 2020, 11, 4602.
Q. Duan, T. Zhang, C. Liu, R. Yuan, G. Li, P. J. Tiw, K. Yang, C. Ge, Y. Yang, R. Huang, Adv. Intell. Syst. 2022, 4, 2200039.
R. Yuan, Q. Duan, P. J. Tiw, G. Li, Z. Xiao, Z. Jing, K. Yang, C. Liu, C. Ge, R. Huang, Nat. Commun. 2022, 13, 3973.
J. Zhu, X. Zhang, R. Wang, M. Wang, P. Chen, L. Cheng, Z. Wu, Y. Wang, Q. Liu, M. Liu, Adv. Mater. 2022, 34, 2200481.
J.-K. Han, S.-C. Park, J.-M. Yu, J.-H. Ahn, Y.-K. Choi, Nano Lett. 2022, 22, 5244.
S. B. Laughlin, R. R. de Ruyter van Steveninck, J. C. Anderson, Nat. Neurosci. 1998, 1, 36.
M. S. Mian, K. Okimura, J. Sakai, J. Appl. Phys. 2015, 117, 215305.
Y. Kalcheim, A. Camjayi, J. D. Valle, P. Salev, M. Rozenberg, I. K. Schuller, Nat. Commun. 2020, 11, 2985.
a) A. Mellnik, J. Lee, A. Richardella, J. Grab, P. Mintun, M. H. Fischer, A. Vaezi, A. Manchon, E.-A. Kim, N. Samarth, Nature 2014, 511, 449;
b) Q. Zhang, K. Chan, J. Li, Sci. Rep. 2018, 8, 4343.
H. Zhao, Z. Dong, H. Tian, D. DiMarzi, M. G. Han, L. Zhang, X. Yan, F. Liu, L. Shen, S. J. Han, S. Cronin, W. Wu, J. Tice, J. Guo, H. Wang, Adv. Mater. 2017, 29, 1703232.
S. Raoux, Annu. Rev. Mater. Res. 2009, 39, 25.
a) A. A. Bessonov, M. N. Kirikova, D. I. Petukhov, M. Allen, T. Ryhänen, M. J. Bailey, Nat. Mater. 2015, 14, 199;
b) D. Son, S. I. Chae, M. Kim, M. K. Choi, J. Yang, K. Park, V. S. Kale, J. H. Koo, C. Choi, M. Lee, Adv. Mater. 2016, 28, 9326.
Y. He, P. Tang, Z. Hu, Q. He, C. Zhu, L. Wang, Q. Zeng, P. Golani, G. Gao, W. Fu, Nat. Commun. 2020, 11, 57.
R. Patel, E. Ipek, E. Friedman, presented at 2012 IEEE Int. SOC Conf., New York, NY, USA, September 2012.
R. Wigington, Proc. IRE 1959, 47, 516.
F. C. Hoppensteadt, E. M. Izhikevich, Phys. Rev. Lett. 1999, 82, 2983.
R. Follmann, E. E. Macau, E. Rosa, J. R. Piqueira, IEEE Trans. Neural Networks Learn. Syst. 2014, 26, 1539.
B. Popescu, G. Csaba, D. Popescu, A. H. Fallahpour, P. Lugli, W. Porod, M. Becherer, J. Appl. Phys. 2018, 124, 152128.
A. Todri-Sanial, S. Carapezzi, C. Delacour, M. Abernot, T. Gil, E. Corti, S. F. Karg, J. Nüñez, M. Jiménèz, M. J. Avedillo, IEEE Trans. Neural Networks Learn. Syst. 2021, 33, 1996.
H. Paugam-Moisy, S. M. Bohte, in Handbook of Natural Computing (Eds: G. Rozenberg, T. Bäck, J. N. Kok), Springer, New York 2012, pp. 335-376.
S. Yang, J. Shin, T. Kim, K.-W. Moon, J. Kim, G. Jang, D. S. Hyeon, J. Yang, C. Hwang, Y. Jeong, NPG Asia Mater. 2021, 13, 11.
S. M. Bohte, J. N. Kok, H. L. Poutre, Neurocomputing 2002, 48, 17.
S. McKennoch, T. Voegtlin, L. Bushnell, Neural Comput. 2009, 21, 9.
D. Huh, T. J. Sejnowski, presented at Advances in Neural Information Processing Systems, Montréal, Canada, December 2018.
F. Zenke, S. Ganguli, Neural Comput. 2018, 30, 1514.
T. P. Lillicrap, A. Santoro, L. Marris, C. J. Akerman, G. Hinton, Nat. Rev. Neurosci. 2020, 21, 335.
W. Gerstner, J. van Hemmen, presented at Advances in Neural Information Processing Systems, Denver, CO, USA, December 1993.
G. Zhang, D. Guo, F. Wu, J. Ma, Neurocomputing 2020, 379, 296.
M. Ignatov, M. Ziegler, M. Hansen, H. Kohlstedt, Sci. Adv. 2017, 3, e1700849.
W. Wang, G. Pedretti, V. Milo, R. Carboni, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini, Sci. Adv. 2018, 4, eaat4752.
J. J. Hopfield, C. D. Brody, Proc. Natl. Acad. Sci. U. S. A. 2001, 98, 1282.
a) A. Serb, J. Bill, A. Khiat, R. Berdan, R. Legenstein, T. Prodromakis, Nat. Commun. 2016, 7, 12611;
b) S. Yu, B. Gao, Z. Fang, H. Yu, J. Kang, H. S. P. Wong, Adv. Mater. 2013, 25, 1774;
c) T. Tuma, M. L. Gallo, A. Sebastian, E. Eleftheriou, IEEE Electron Device Lett. 2016, 37, 1238;
d) A. Sebastian, T. Tuma, N. Papandreou, M. L. Gallo, L. Kull, T. Parnell, E. Eleftheriou, Nat. Commun. 2017, 8, 1115.
J.-K. Han, M. Seo, W.-K. Kim, M.-S. Kim, S.-Y. Kim, M.-S. Kim, G.-J. Yun, G.-B. Lee, J.-M. Yu, Y.-K. Choi, IEEE Electron Device Lett. 2019, 41, 208.
a) E. T. Vu, F. B. Krasne, Science 1992, 255, 1710;
b) J. Snoek, R. Zemel, R. P. Adams, presented at Advances in Neural Information Processing Systems, Lake Tahoe, NV, USA, December 2013.
a) H. Zeng, J. R. Sanes, Nat. Rev. Neurosci. 2017, 18, 530;
b) U. Hasson, S. A. Nastase, A. Goldstein, Neuron 2020, 105, 416.
a) J. E. Ledoux, D. A. Ruggiero, R. Forest, R. Stornetta, D. J. Reis, J. Comp. Neurol. 1987, 264, 123;
b) C. Van Eden, J. Kros, H. Uylings, Prog. Brain Res. 1991, 85, 169.
T. Matsui, M. Amagai, Int. Immunol. 2015, 27, 269.
T. Someya, M. Amagai, Nat. Biotechnol. 2019, 37, 382.
a) M. Kaltenbrunner, T. Sekitani, J. Reeder, T. Yokota, K. Kuribara, T. Tokuhara, M. Drack, R. Schwödiauer, I. Graz, S. Bauer-Gogonea, Nature 2013, 499, 458;
b) Y. van De Burgt, A. Melianas, S. T. Keene, G. Malliaras, A. Salleo, Nat. Electron. 2018, 1, 386.
a) A. Longtin, J. Stat. Phys. 1993, 70, 309;
b) S.-G. Lee, A. Neiman, S. Kim, Phys. Rev. E 1998, 57, 3292;
c) Y. Yu, W. Wang, J. Wang, F. Liu, Phys. Rev. E 2001, 63, 021907.
L. Buesing, J. Bill, B. Nessler, W. Maass, PLoS Comput. Biol. 2011, 7, e1002211.