Substitutional p-Type Doping in NbS

TMDC heterostructures metal-organic chemical vapor deposition (MOCVD) p-type MoS 2 substitutional doping

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Apr 2023
Historique:
revised: 30 12 2022
received: 11 10 2022
medline: 17 1 2023
pubmed: 17 1 2023
entrez: 16 1 2023
Statut: ppublish

Résumé

Monolayer MoS

Identifiants

pubmed: 36644893
doi: 10.1002/adma.202209371
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2209371

Subventions

Organisme : European Research Council
ID : 899775
Pays : International
Organisme : Swiss National Science Foundation
ID : 157739
Pays : Switzerland
Organisme : Swiss National Science Foundation
ID : 175822
Pays : Switzerland
Organisme : European Research Council
ID : 682332
Pays : International

Informations de copyright

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Références

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Nat. Nanotechnol. 2011, 6, 147.
S. W. Han, H. Kwon, S. K. Kim, S. Ryu, W. S. Yun, D. H. Kim, J. H. Hwang, J.-S. Kang, J. Baik, H. J. Shin, S. C. Hong, Phys. Rev. B 2011, 84, 045409.
S. Manzeli, D. Ovchinnikov, D. Pasquier, O. V. Yazyev, A. Kis, Nat. Rev. Mater. 2017, 2, 1733.
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Nano Lett. 2010, 10, 1271.
K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Phys. Rev. Lett. 2010, 105, 136805.
K. Dolui, I. Rungger, S. Sanvito, Phys. Rev. B 2013, 87, 165402.
B. Akdim, R. Pachter, S. Mou, Nanotechnology 2016, 27, 185701.
G. Migliato Marega, Y. Zhao, A. Avsar, Z. Wang, M. Tripathi, A. Radenovic, A. Kis, Nature 2020, 587, 72.
P. Yao, H. Wu, B. Gao, J. Tang, Q. Zhang, W. Zhang, J. J. Yang, H. Qian, Nature 2020, 577, 641.
T. kumar Agarwal, B. Soree, I. Radu, P. Raghavan, G. Iannaccone, G. Fiori, W. Dehaene, M. Heyns, Sci. Rep. 2017, 7, 5016.
G. Iannaccone, F. Bonaccorso, L. Colombo, G. Fiori, Nat. Nanotechnol. 2018, 13, 183.
S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J. S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, R. M. Wallace, A. Javey, Nano Lett. 2014, 14, 1337.
S. Wu, Y. Zeng, X. Zeng, S. Wang, Y. Hu, W. Wang, S. Yin, G. Zhou, W. Jin, T. Ren, Z. Guo, J. Lu, 2D Mater. 2019, 6, 025007.
A. Azcatl, X. Qin, A. Prakash, C. Zhang, L. Cheng, Q. Wang, N. Lu, M. J. Kim, J. Kim, K. Cho, R. Addou, C. L. Hinkle, J. Appenzeller, R. M. Wallace, Nano Lett. 2016, 16, 5437.
A. Nipane, D. Karmakar, N. Kaushik, S. Karande, S. Lodha, ACS Nano 2016, 10, 2128.
S.-W. Min, M. Yoon, S. J. Yang, K. R. Ko, S. Im, ACS Appl. Mater. Interfaces 2018, 10, 4206.
S. Zhang, S. T. Le, C. A. Richter, C. A. Hacker, Appl. Phys. Lett. 2019, 115, 073106.
M. Li, J. Yao, X. Wu, S. Zhang, B. Xing, X. Niu, X. Yan, Y. Yu, Y. Liu, Y. Wang, ACS Appl. Mater. Interfaces 2020, 12, 6276.
E. Z. Xu, H. M. Liu, K. Park, Z. Li, Y. Losovyj, M. Starr, M. Werbianskyj, H. A. Fertig, S. X. Zhang, Nanoscale 2017, 9, 3576.
B. Song, H. Gu, M. Fang, Z. Guo, Y.-T. Ho, X. Chen, H. Jiang, S. Liu, ACS Appl. Electron. Mater. 2021, 3, 2564.
Y. C. Cheng, Z. Y. Zhu, W. B. Mi, Z. B. Guo, U. Schwingenschlögl, Phys. Rev. B 2013, 87, 100401.
A. Ramasubramaniam, D. Naveh, Phys. Rev. B 2013, 87, 195201.
Y. Liu, P. Stradins, S.-H. Wei, Sci. Adv. 2016, 2, e1600069.
X. Liu, M. C. Hersam, Adv. Mater. 2018, 30, 1801586.
A. K. Geim, I. V. Grigorieva, Nature 2013, 499, 419.
K. L. Choy, Prog. Mater. Sci. 2003, 48, 57.
Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, B. K. Tay, J. Lou, S. T. Pantelides, Z. Liu, W. Zhou, P. M. Ajayan, Nat. Mater. 2014, 13, 1135.
X. Duan, C. Wang, J. C. Shaw, R. Cheng, Y. Chen, H. Li, X. Wu, Y. Tang, Q. Zhang, A. Pan, J. Jiang, R. Yu, Y. Huang, X. Duan, Nat. Nanotechnol. 2014, 9, 1024.
Y. Zhang, L. Yin, J. Chu, T. A. Shifa, J. Xia, F. Wang, Y. Wen, X. Zhan, Z. Wang, J. He, Adv. Mater. 2018, 30, 1803665.
H. Kim, D. Ovchinnikov, D. Deiana, D. Unuchek, A. Kis, Nano Lett. 2017, 17, 5056.
Z. Wang, C.-Y. Cheon, M. Tripathi, G. M. Marega, Y. Zhao, H. G. Ji, M. Macha, A. Radenovic, A. Kis, ACS Nano 2021, 15, 18403.
H. Heo, J. H. Sung, G. Jin, J.-H. Ahn, K. Kim, M.-J. Lee, S. Cha, H. Choi, M.-H. Jo, Adv. Mater. 2015, 27, 3803.
A. Sohn, C. Kim, J.-H. Jung, J. H. Kim, K.-E. Byun, Y. Cho, P. Zhao, S. W. Kim, M. Seol, Z. Lee, S.-W. Kim, H.-J. Shin, Adv. Mater. 2022, 34, 2103286.
R. Rao, A. E. Islam, S. Singh, R. Berry, R. K. Kawakami, B. Maruyama, J. Katoch, Phys. Rev. B 2019, 99, 195401.
A. Michail, N. Delikoukos, J. Parthenios, C. Galiotis, K. Papagelis, Appl. Phys. Lett. 2016, 108, 173102.
S. Mouri, Y. Miyauchi, K. Matsuda, Nano Lett. 2013, 13, 5944.
K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, J. Shan, Nat. Mater. 2013, 12, 207.
O. de la Peña, A. Aguayo, R. de Coss, Phys. Rev. B 2002, 66, 012511.
T. Cusati, G. Fiori, A. Gahoi, V. Passi, M. C. Lemme, A. Fortunelli, G. Iannaccone, Sci. Rep. 2017, 7, 5109.
R. Das, B. Rakshit, S. Debnath, P. Mahadevan, Phys. Rev. B 2014, 89, 115201.
F. A. Rasmussen, K. S. Thygesen, J. Phys. Chem. C 2015, 119, 13169.
S. K. Cheung, N. W. Cheung, Appl. Phys. Lett. 1986, 49, 85.
H. Altuntaş, Ş. Altındal, H. Shtrikman, S. Özçelik, Microelectron. Reliab. 2009, 49, 904.
P. Yang, X. Zou, Z. Zhang, M. Hong, J. Shi, S. Chen, J. Shu, L. Zhao, S. Jiang, X. Zhou, Y. Huan, C. Xie, P. Gao, Q. Chen, Q. Zhang, Z. Liu, Y. Zhang, Nat. Commun. 2018, 9, 979.
P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, A. Dal Corso, S. de Gironcoli, S. Fabris, G. Fratesi, R. Gebauer, U. Gerstmann, C. Gougoussis, A. Kokalj, M. Lazzeri, L. Martin-Samos, N. Marzari, F. Mauri, R. Mazzarello, S. Paolini, A. Pasquarello, L. Paulatto, C. Sbraccia, S. Scandolo, G. Sclauzero, A. P. Seitsonen, et al., J. Phys.: Condens. Matter 2009, 21, 395502.
J. P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 1996, 77, 3865.
G. Fiori, G. Iannaccone, Proc. IEEE 2013, 101, 1653.

Auteurs

Zhenyu Wang (Z)

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.

Mukesh Tripathi (M)

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.

Zahra Golsanamlou (Z)

CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy.

Poonam Kumari (P)

CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy.

Giuseppe Lovarelli (G)

Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.
Department of Physics "E. Fermi", Università di Pisa, Pisa, I-56127, Italy.

Fabrizio Mazziotti (F)

Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.

Demetrio Logoteta (D)

Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.

Gianluca Fiori (G)

Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.

Luca Sementa (L)

CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy.

Guilherme Migliato Marega (GM)

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.

Hyun Goo Ji (HG)

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.

Yanfei Zhao (Y)

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.

Aleksandra Radenovic (A)

Institute of Bioengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.

Giuseppe Iannaccone (G)

Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.

Alessandro Fortunelli (A)

CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy.

Andras Kis (A)

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.

Classifications MeSH