Changes in the Raman Spectrum of Monolayer Graphene under Compression/Stretching Strain in Graphene/Piezoelectric Crystal Structures.

LiNbO3 domain structure PCA Raman spectroscopy graphene

Journal

Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216

Informations de publication

Date de publication:
14 Jan 2023
Historique:
received: 24 11 2022
revised: 09 01 2023
accepted: 12 01 2023
entrez: 21 1 2023
pubmed: 22 1 2023
medline: 22 1 2023
Statut: epublish

Résumé

Results from studying the effect of an applied electric voltage on the Raman spectrum of graphene deposited on a lithium niobate crystal substrate with a ferroelectric domain structure are presented. The use of the principal component method for data processing in combination with correlation analysis made it possible to reveal the contribution to the change in the spectra associated with the linear deformation of the substrate due to the inverse piezoelectric effect. An effect of the graphene coating peeling was found. Furthermore, bending deformations of the graphene coating associated with the presence of a relief on the substrate were found. An analysis of the change in the spectra of graphene under the application of an electric voltage made it possible to determine the height of this relief.

Identifiants

pubmed: 36678103
pii: nano13020350
doi: 10.3390/nano13020350
pmc: PMC9866261
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : Russian Ministry of Science and Higher Education
ID : Grant No. 075-15-2020-791

Références

Nature. 2005 Nov 10;438(7065):197-200
pubmed: 16281030
Nano Lett. 2010 Sep 8;10(9):3453-8
pubmed: 20695450
Sci Rep. 2017 May 11;7(1):1767
pubmed: 28496129
RSC Adv. 2019 Jan 8;9(2):863-877
pubmed: 35517633

Auteurs

Artemy Irzhak (A)

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia.

Dmitry Irzhak (D)

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia.

Oleg Kononenko (O)

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia.

Kirill Pundikov (K)

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia.

Dmitry Roshchupkin (D)

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia.

Classifications MeSH