Ultralow voltage (1
2D materials
SnS thin films
bandgap modulation
ultralow voltage electrical switch
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
13 Feb 2023
13 Feb 2023
Historique:
received:
08
12
2022
accepted:
27
01
2023
pubmed:
28
1
2023
medline:
28
1
2023
entrez:
27
1
2023
Statut:
epublish
Résumé
In this paper, we show in a series of experiments on 10 nm thick SnS thin film-based back-gate transistors that in the absence of the gate voltage, the drain current versus drain voltage (
Identifiants
pubmed: 36706454
doi: 10.1088/1361-6528/acb69e
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Informations de copyright
© 2023 IOP Publishing Ltd.