Skyrmions-based logic gates in one single nanotrack completely reconstructed via chirality barrier.

DMI chirality barrier reconstruction of single device single-nanotrack logic gates skyrmion spintronics

Journal

National science review
ISSN: 2053-714X
Titre abrégé: Natl Sci Rev
Pays: China
ID NLM: 101633095

Informations de publication

Date de publication:
Dec 2022
Historique:
received: 01 07 2021
revised: 06 01 2022
accepted: 07 01 2022
entrez: 30 1 2023
pubmed: 31 1 2023
medline: 31 1 2023
Statut: epublish

Résumé

Logic gates based on magnetic elements are promising candidates for logic-in-memory applications with non-volatile data retention, near-zero leakage and scalability. In such spin-based logic devices, however, the multi-strip structure and fewer functions are obstacles to improving integration and reducing energy consumption. Here we propose a skyrmions-based single-nanotrack logic family including AND, OR, NOT, NAND, NOR, XOR and XNOR that can be implemented and reconstructed by building and switching the Dzyaloshinskii-Moriya interaction (DMI) chirality barrier on a racetrack memory. Besides the pinning effect of the DMI chirality barrier on skyrmions, the annihilation, fusion and shunting of two skyrmions with opposite chirality are also achieved and demonstrated via local reversal of the DMI, which are necessary for the design of an engineer programmable logic nanotrack, transistor and complementary racetrack memory.

Identifiants

pubmed: 36713589
doi: 10.1093/nsr/nwac021
pii: nwac021
pmc: PMC9874028
doi:

Types de publication

Journal Article

Langues

eng

Pagination

nwac021

Informations de copyright

© The Author(s) 2022. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd.

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Auteurs

Dongxing Yu (D)

Quantum Functional Materials Laboratory, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

Hongxin Yang (H)

Quantum Functional Materials Laboratory, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

Mairbek Chshiev (M)

Université Grenoble Alpes, CEA, CNRS, Spintec, Grenoble 38000, France.
Institut Universitaire de France (IUF), Paris 75231, France.

Albert Fert (A)

Université Paris-Saclay, Unité Mixte de Physique CNRS-Thales, Palaiseau 91767, France.

Classifications MeSH