High-temperature operation of gallium oxide memristors up to 600 K.


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
30 Jan 2023
Historique:
received: 27 06 2022
accepted: 12 01 2023
entrez: 30 1 2023
pubmed: 31 1 2023
medline: 31 1 2023
Statut: epublish

Résumé

Memristors have attracted much attention for application in neuromorphic devices and brain-inspired computing hardware. Their performance at high temperatures is required to be sufficiently reliable in neuromorphic computing, potential application to power electronics, and the aerospace industry. This work focuses on reduced gallium oxide (GaO

Identifiants

pubmed: 36717634
doi: 10.1038/s41598-023-28075-4
pii: 10.1038/s41598-023-28075-4
pmc: PMC9886979
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

1261

Subventions

Organisme : Ministry of Education, Culture, Sports, Science and Technology
ID : 19K04468
Organisme : Ministry of Education, Culture, Sports, Science and Technology
ID : 20H00248

Informations de copyright

© 2023. The Author(s).

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Auteurs

Kento Sato (K)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan.

Yusuke Hayashi (Y)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan. hayashi@ee.es.osaka-u.ac.jp.

Naoki Masaoka (N)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan.

Tetsuya Tohei (T)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan.

Akira Sakai (A)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan. sakai@ee.es.osaka-u.ac.jp.

Classifications MeSH