Characterizing Density and Spatial Distribution of Trap States in Ta

defect passivation drive-level capacitance profiling hybrid photoelectrode oxynitride silatrane surface modification tantalum nitride

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
15 Feb 2023
Historique:
pubmed: 4 2 2023
medline: 4 2 2023
entrez: 3 2 2023
Statut: ppublish

Résumé

Tantalum nitride (Ta

Identifiants

pubmed: 36734937
doi: 10.1021/acsami.2c19275
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

7969-7977

Auteurs

Peter N Rudd (PN)

Department of Applied Physical Sciences, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States.

Stephen J Tereniak (SJ)

Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States.

Rene Lopez (R)

Department of Applied Physical Sciences, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States.
Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States.

Classifications MeSH