Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe
2D materials
MOCVD
WSe2
defects
growth parameters
metal-organic chemical vapor deposition
transition metal dichalcogenides
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
01 Mar 2023
01 Mar 2023
Historique:
received:
19
10
2022
accepted:
06
02
2023
pubmed:
7
2
2023
medline:
7
2
2023
entrez:
6
2
2023
Statut:
epublish
Résumé
Structural defects in transition metal dichalcogenide (TMDC) monolayers (ML) play a significant role in determining their (opto)electronic properties, triggering numerous efforts to control defect densities during material growth or by post-growth treatments. Various types of TMDC have been successfully deposited by MOCVD (metal-organic chemical vapor deposition), which is a wafer-scale deposition technique with excellent uniformity and controllability. However, so far there are no findings on the extent to which the incorporation of defects can be controlled by growth parameters during MOCVD processes of TMDC. In this work, we investigate the effect of growth temperature and precursor ratio during MOCVD of tungsten diselenide (WSe
Identifiants
pubmed: 36745916
doi: 10.1088/1361-6528/acb947
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Informations de copyright
© 2023 IOP Publishing Ltd.