Bilayer-Nanomesh Transparent Neuroelectrodes on 10μm-Thick PDMS.


Journal

Technical digest. International Electron Devices Meeting
ISSN: 2156-017X
Titre abrégé: Tech Dig Int Electron Devices Meet
Pays: United States
ID NLM: 101740203

Informations de publication

Date de publication:
Dec 2022
Historique:
entrez: 17 2 2023
pubmed: 18 2 2023
medline: 18 2 2023
Statut: ppublish

Résumé

Transparent electrode arrays have emerged as promising platforms for neural interfacing by enabling simultaneous electrophysiological recording and optical measurements. Soft and thin devices also have compelling advantages due to their less mechanical mismatch with the brain tissue. Here we demonstrate a bilayer-nanomesh-based transparent microelectrode array (MEA) on ultrathin Polydimethylsiloxane (PDMS) substrate. We have successfully fabricated 32-channel, bilayer-nanomesh microelectrodes on PDMS with total device thickness down to only 10μm. In addition to excellent electrode performance, device reliability, and optical transparency, we have also demonstrated successful hydrophilic surface modification and great sterilization compatibility.

Identifiants

pubmed: 36798108
doi: 10.1109/iedm45625.2022.10019516
pmc: PMC9929514
mid: NIHMS1872549
doi:

Types de publication

Journal Article

Langues

eng

Pagination

29.3.1-29.3.4

Subventions

Organisme : NINDS NIH HHS
ID : RF1 NS118301
Pays : United States

Références

Biomed Microdevices. 2007 Dec;9(6):923-38
pubmed: 17252207
Sci Adv. 2018 Sep 05;4(9):eaat0626
pubmed: 30191176
Nano Lett. 2018 May 9;18(5):2903-2911
pubmed: 29608857
Microsyst Nanoeng. 2017 Apr 24;3:16091
pubmed: 31057854
IEEE Trans Biomed Circuits Syst. 2013 Feb;7(1):1-10
pubmed: 23853274
Nature. 2009 Oct 15;461(7266):930-9
pubmed: 19829373
ACS Nano. 2017 Apr 25;11(4):4365-4372
pubmed: 28391679

Auteurs

Jaehyeon Ryu (J)

Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA.
Thayer School of Engineering, Dartmouth College, Hanover, NH, USA.

Yi Qiang (Y)

Thayer School of Engineering, Dartmouth College, Hanover, NH, USA.

Dongyeol Jang (D)

Thayer School of Engineering, Dartmouth College, Hanover, NH, USA.

Junyeub Suh (J)

Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, South Korea.

Hui Fang (H)

Thayer School of Engineering, Dartmouth College, Hanover, NH, USA.

Classifications MeSH