Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device.

magnetic skyrmion majority logic skyrmion Hall angle voltage controlled magnetic anisotropy

Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
14 Mar 2023
Historique:
received: 05 11 2022
accepted: 24 02 2023
pubmed: 25 2 2023
medline: 25 2 2023
entrez: 24 2 2023
Statut: epublish

Résumé

Magnetic skyrmions are topologically protected spin textures and they are suitable for future logic-in-memory applications for energy-efficient, high-speed information processing and computing technologies. In this work, we have demonstrated skyrmion-based 3 bit majority logic gate using micromagnetic simulations. The skyrmion motion is controlled by introducing a

Identifiants

pubmed: 36827697
doi: 10.1088/1361-6528/acbeb3
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

© 2023 IOP Publishing Ltd.

Auteurs

Bibekananda Paikaray (B)

Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi 502284, Telangana, India.

Mahathi Kuchibhotla (M)

Department of Physics, Indian Institute of Technology Hyderabad, Kandi 502284, Telangana, India.

Arabinda Haldar (A)

Department of Physics, Indian Institute of Technology Hyderabad, Kandi 502284, Telangana, India.

Chandrasekhar Murapaka (C)

Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi 502284, Telangana, India.

Classifications MeSH