Phononic Crystal Made of Silicon Ridges on a Membrane for Liquid Sensing.

acoustic sensor defect mode dispersion curve liquid viscosity membrane phononic crystal transmission curve

Journal

Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366

Informations de publication

Date de publication:
13 Feb 2023
Historique:
received: 11 01 2023
revised: 04 02 2023
accepted: 10 02 2023
entrez: 28 2 2023
pubmed: 1 3 2023
medline: 1 3 2023
Statut: epublish

Résumé

We propose the design of a phononic crystal to sense the acoustic properties of a liquid that is constituted by an array of silicon ridges on a membrane. In contrast to other concepts, the ridges are immersed in the liquid. The introduction of a suitable cavity in the periodic array gives rise to a confined defect mode with high localization in the cavity region and strong solid-liquid interaction, which make it sensitive to the acoustic properties of the liquid. By using a finite element method simulation, we theoretically study the transmission and cavity excitation of an incident flexural wave of the membrane. The observation of the vibrations of this mode can be achieved either outside the area of the phononic crystal or just above the cavity. We discuss the existence of the resonant modes, as well as its quality factor and sensitivity to liquid properties as a function of the geometrical parameters. The performance of the proposed sensor has then been tested to detect the variation in NaI concentration in a NaI-water mixture.

Identifiants

pubmed: 36850678
pii: s23042080
doi: 10.3390/s23042080
pmc: PMC9960324
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Subventions

Organisme : National French Agency
ID : ANR-18-CE92-0023
Organisme : Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)
ID : VE 483/2-1 and LU 605/22-1

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Auteurs

Abdellatif Gueddida (A)

Institut d'Electronique, Microélectronique et Nanotechnologie, UMR CNRS8520, Université de Lille, 59650 Villeneuve d'Ascq, France.

Victor Zhang (V)

Institut d'Electronique, Microélectronique et Nanotechnologie, UMR CNRS8520, Université de Lille, 59650 Villeneuve d'Ascq, France.

Laurent Carpentier (L)

Institut d'Electronique, Microélectronique et Nanotechnologie, UMR CNRS8520, Université de Lille, 59650 Villeneuve d'Ascq, France.

Jérémy Bonhomme (J)

Institut des Nanosciences de Paris, Sorbonne Université, UMR CNRS 7588, 75005 Paris, France.

Bernard Bonello (B)

Institut des Nanosciences de Paris, Sorbonne Université, UMR CNRS 7588, 75005 Paris, France.

Yan Pennec (Y)

Institut d'Electronique, Microélectronique et Nanotechnologie, UMR CNRS8520, Université de Lille, 59650 Villeneuve d'Ascq, France.

Bahram Djafari-Rouhani (B)

Institut d'Electronique, Microélectronique et Nanotechnologie, UMR CNRS8520, Université de Lille, 59650 Villeneuve d'Ascq, France.

Classifications MeSH