Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes.
electrical noise
fluctuation
laser diode
optical noise
parabolic QW
rectangular QW
Journal
Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366
Informations de publication
Date de publication:
17 Feb 2023
17 Feb 2023
Historique:
received:
24
01
2023
revised:
10
02
2023
accepted:
16
02
2023
entrez:
28
2
2023
pubmed:
1
3
2023
medline:
1
3
2023
Statut:
epublish
Résumé
Fabry-Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780-1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures were grown using the molecular beam epitaxy (MBE) technique on the
Identifiants
pubmed: 36850880
pii: s23042282
doi: 10.3390/s23042282
pmc: PMC9965910
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Subventions
Organisme : Lietuvos Mokslo Taryba
ID : S-MIP-22-86
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