Reducing charge noise in quantum dots by using thin silicon quantum wells.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
13 Mar 2023
13 Mar 2023
Historique:
received:
30
09
2022
accepted:
25
02
2023
entrez:
14
3
2023
pubmed:
15
3
2023
medline:
15
3
2023
Statut:
epublish
Résumé
Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a
Identifiants
pubmed: 36914637
doi: 10.1038/s41467-023-36951-w
pii: 10.1038/s41467-023-36951-w
pmc: PMC10011559
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
1385Subventions
Organisme : EC | Horizon 2020 Framework Programme (EU Framework Programme for Research and Innovation H2020)
ID : 951852
Commentaires et corrections
Type : ErratumIn
Informations de copyright
© 2023. The Author(s).
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