Structural and magnetic properties of Y

FMR line width lattice mismatch liquid-phase epitaxy saturation magnetization

Journal

Acta crystallographica Section B, Structural science, crystal engineering and materials
ISSN: 2052-5206
Titre abrégé: Acta Crystallogr B Struct Sci Cryst Eng Mater
Pays: England
ID NLM: 101609037

Informations de publication

Date de publication:
01 Apr 2023
Historique:
received: 28 11 2022
accepted: 18 01 2023
medline: 16 3 2023
pubmed: 16 3 2023
entrez: 15 3 2023
Statut: ppublish

Résumé

Ultra-thin rare earth iron garnet (RIG) films with a narrow ferromagnetic resonance (FMR) line width and a low damping factor have attracted a great deal of attention for microwave and spintronic applications. In this work, 200 nm Y

Identifiants

DOI: 10.1107/S2052520623000483 PMID: 36920874
pubmed: 36920874
pii: S2052520623000483
doi: 10.1107/S2052520623000483
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

157-163

Subventions

Organisme : International Cooperation and Exchange Programme
ID : SQ2018YFE0205600
Organisme : National Natural Science Foundation of China
ID : 52072062
Organisme : National Natural Science Foundation of China
ID : 51472046
Organisme : National Natural Science Foundation of China
ID : 61831012
Organisme : Sichuan Province Science and Technology Support Program
ID : 2021JDTD0026

Auteurs

Yuanjing Zhang (Y)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Qinghui Yang (Q)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Yingli Liu (Y)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Aimin Hu (A)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Ding Zhang (D)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Han Li (H)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Jingyan Yu (J)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Jiantao Huang (J)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Yongcheng Lu (Y)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Lei Zhang (L)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Qiang Xue (Q)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Yilei Li (Y)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Lichuan Jin (L)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Qiye Wen (Q)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Huaiwu Zhang (H)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China.

Classifications MeSH