Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films.
Topological insulator
anomalous Hall effect
magnetic exchange interaction
molecular beam epitaxy growth
thin film
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
12 Apr 2023
12 Apr 2023
Historique:
medline:
18
3
2023
pubmed:
18
3
2023
entrez:
17
3
2023
Statut:
ppublish
Résumé
To date, the quantum anomalous Hall effect has been realized in chromium (Cr)- and/or vanadium(V)-doped topological insulator (Bi,Sb)
Identifiants
pubmed: 36930727
doi: 10.1021/acs.nanolett.2c03827
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM