Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry.

Raman spectroscopy core-level spectroscopies density functional theory (DFT) calculations deuterium-based plasma polycrystalline diamonds

Journal

Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338

Informations de publication

Date de publication:
Jun 2023
Historique:
revised: 03 03 2023
received: 30 12 2022
medline: 24 3 2023
pubmed: 24 3 2023
entrez: 23 3 2023
Statut: ppublish

Résumé

Polycrystalline boron-doped diamond is a promising material for high-power aqueous electrochemical applications in bioanalytics, catalysis, and energy storage. The chemical vapor deposition (CVD) process of diamond formation and doping is totally diversified by using high kinetic energies of deuterium substituting habitually applied hydrogen. The high concentration of deuterium in plasma induces atomic arrangements and steric hindrance during synthesis reactions, which in consequence leads to a preferential (111) texture and more effective boron incorporation into the lattice, reaching a one order of magnitude higher density of charge carriers. This provides the surface reconstruction impacting surficial populations of CC dimers, CH, CO groups, and COOH termination along with enhanced kinetics of their abstraction, as revealed by high-resolution core-level spectroscopies. A series of local densities of states were computed, showing a rich set of highly occupied and localized surface states for samples deposited in deuterium, negating the connotations of band bending. The introduction of enhanced incorporation of boron into (111) facet of diamond leads to the manifestation of surface electronic states below the Fermi level and above the bulk valence band edge. This unique electronic band structure affects the charge transfer kinetics, electron affinity, and diffusion field geometry critical for efficient electrolysis, electrocatalysis, and photoelectrochemistry.

Identifiants

pubmed: 36949366
doi: 10.1002/smll.202208265
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2208265

Subventions

Organisme : Gdansk University of Technology
ID : DEC-02/2021/IDUB/II.1/AMERICIUM
Organisme : Americium - "Excellence Initiative - Research University"
ID : 20-11140S
Organisme : Czech Science Foundation
Organisme : National Science Centre, Poland
ID : 2021/43/I/ST7/03205

Informations de copyright

© 2023 The Authors. Small published by Wiley-VCH GmbH.

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Auteurs

Michał Sobaszek (M)

Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Department of Metrology and Optoelectronics, 11/12 Narutowicza Str., Gdansk, 80-233, Poland.

Maria Brzhezinskaya (M)

Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109, Berlin, Germany.

Adrian Olejnik (A)

Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Department of Metrology and Optoelectronics, 11/12 Narutowicza Str., Gdansk, 80-233, Poland.

Vincent Mortet (V)

Czech Technical University in Prague, Faculty of Electrical Engineering, Technická 1902/2, Prague 6, 166 27, Czech Republic.

Mahebub Alam (M)

Czech Technical University in Prague, Faculty of Electrical Engineering, Technická 1902/2, Prague 6, 166 27, Czech Republic.

Mirosław Sawczak (M)

The Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14, Gdansk, 80-231, Poland.

Mateusz Ficek (M)

Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Department of Metrology and Optoelectronics, 11/12 Narutowicza Str., Gdansk, 80-233, Poland.

Maria Gazda (M)

Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, Narutowicza 11/12, Gdańsk, 80-233, Poland.

Zdeněk Weiss (Z)

CSc, FZU - Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Praha 8, 182 21, Czech Republic.

Robert Bogdanowicz (R)

Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Department of Metrology and Optoelectronics, 11/12 Narutowicza Str., Gdansk, 80-233, Poland.

Classifications MeSH