Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices.

memory nanographene organic phototransistors photosensitivity

Journal

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
ISSN: 2198-3844
Titre abrégé: Adv Sci (Weinh)
Pays: Germany
ID NLM: 101664569

Informations de publication

Date de publication:
May 2023
Historique:
revised: 22 02 2023
received: 04 01 2023
medline: 31 3 2023
pubmed: 31 3 2023
entrez: 30 3 2023
Statut: ppublish

Résumé

Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆V

Identifiants

pubmed: 36995051
doi: 10.1002/advs.202300057
pmc: PMC10214218
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2300057

Subventions

Organisme : European Social Fund
ID : 100382168
Organisme : EU Graphene Flagship
ID : 881603
Organisme : EU Graphene Flagship
ID : 813036
Organisme : EU Graphene Flagship
ID : 101017821
Organisme : European Union's Horizon 2020
ID : 101008701
Organisme : China Scholarship Council
ID : 201806750012
Organisme : Deutsche Forschungsgemeinschaft
ID : KR4364/4

Informations de copyright

© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.

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Auteurs

Shaoling Bai (S)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.

Lin Yang (L)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.

Katherina Haase (K)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.

Jakob Wolansky (J)

Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.

Zongbao Zhang (Z)

Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.

Hsin Tseng (H)

Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.

Felix Talnack (F)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.

Joshua Kress (J)

Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.

Jonathan Perez Andrade (JP)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Leibniz Institute for Solid State and Materials Research, Helmholtzstraße 20, 01069, Dresden, Germany.

Johannes Benduhn (J)

Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.

Ji Ma (J)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany.

Xinliang Feng (X)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany.

Mike Hambsch (M)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.

Stefan C B Mannsfeld (SCB)

Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.
Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany.

Classifications MeSH