Local dielectric function of hBN-encapsulated WS

excitons hexagonal boron nitride imaging ellipsometry transition metal dichalcogenides van der Waals heterostructures

Journal

Journal of physics. Condensed matter : an Institute of Physics journal
ISSN: 1361-648X
Titre abrégé: J Phys Condens Matter
Pays: England
ID NLM: 101165248

Informations de publication

Date de publication:
12 Apr 2023
Historique:
received: 30 11 2022
accepted: 30 03 2023
medline: 31 3 2023
pubmed: 31 3 2023
entrez: 30 3 2023
Statut: epublish

Résumé

Hexagonal boron nitride (hBN), sometimes referred to as white graphene, receives growing interest in the scientific community, especially when combined into van der Waals (vdW) homo- and heterostacks, in which novel and interesting phenomena may arise. hBN is also commonly used in combination with two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs). The realization of hBN-encapsulated TMDC homo- and heterostacks can indeed offer opportunities to investigate and compare TMDC excitonic properties in various stacking configurations. In this work, we investigate the optical response at the micrometric scale of mono- and homo-bilayer WS

Identifiants

pubmed: 36996840
doi: 10.1088/1361-648X/acc918
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

Creative Commons Attribution license.

Auteurs

Marzia Ferrera (M)

OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy.
Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy.

Apoorva Sharma (A)

Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.

Ilya Milekhin (I)

Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.
Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107 Chemnitz, Germany.

Yang Pan (Y)

Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.
Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107 Chemnitz, Germany.

Domenica Convertino (D)

Center for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy.

Simona Pace (S)

Center for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy.
Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy.

Giorgio Orlandini (G)

Center for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy.

Ermes Peci (E)

OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy.

Lorenzo Ramò (L)

OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy.

Michele Magnozzi (M)

OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy.
INFN, Sezione di Genova, via Dodecaneso 33, 16146 Genova, Italy.

Camilla Coletti (C)

Center for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy.
Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy.

Georgeta Salvan (G)

Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.

Dietrich R T Zahn (DRT)

Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.
Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107 Chemnitz, Germany.

Maurizio Canepa (M)

OptMatLab, Physics Department, Università di Genova, via Dodecaneso 33, 16146 Genova, Italy.

Francesco Bisio (F)

CNR-SPIN, corso Perrone 24, 16152 Genova, Italy.

Classifications MeSH