Silver nanowire electrodes for transparent light emitting devices based on WS

2D materials light emitting devices silver nanowires transition metal dichalcogenides transparent conductive materials

Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
26 Apr 2023
Historique:
received: 19 01 2023
accepted: 11 04 2023
medline: 12 4 2023
pubmed: 12 4 2023
entrez: 11 4 2023
Statut: epublish

Résumé

Transition metal dichalcogenide (TMDC) monolayers with their direct band gap in the visible to near-infrared spectral range have emerged over the past years as highly promising semiconducting materials for optoelectronic applications. Progress in scalable fabrication methods for TMDCs like metal-organic chemical vapor deposition (MOCVD) and the ambition to exploit specific material properties, such as mechanical flexibility or high transparency, highlight the importance of suitable device concepts and processing techniques. In this work, we make use of the high transparency of TMDC monolayers to fabricate transparent light-emitting devices (LEDs). MOCVD-grown WS

Identifiants

pubmed: 37040718
doi: 10.1088/1361-6528/accbc6
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

Creative Commons Attribution license.

Auteurs

Henrik Myja (H)

Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, D-47057 Duisburg, Germany.

Zhiqiao Yang (Z)

Department of Electrical & Computer Engineering and WIN, University of Waterloo, Waterloo, ON N2L 3G1, Canada.

Irene A Goldthorpe (IA)

Department of Electrical & Computer Engineering and WIN, University of Waterloo, Waterloo, ON N2L 3G1, Canada.

Alexander J B Jones (AJB)

Department of Mechanical & Mechatronics Engineering and WIN, University of Waterloo, Waterloo, ON N2L 3G1, Canada.

Kevin P Musselman (KP)

Department of Mechanical & Mechatronics Engineering and WIN, University of Waterloo, Waterloo, ON N2L 3G1, Canada.

Annika Grundmann (A)

Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany.

Holger Kalisch (H)

Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany.

Andrei Vescan (A)

Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany.

Michael Heuken (M)

Compound Semiconductor Technology, RWTH Aachen University, D-52074 Aachen, Germany.
AIXTRON SE, D-52134 Herzogenrath, Germany.

Tilmar Kümmell (T)

Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, D-47057 Duisburg, Germany.

Gerd Bacher (G)

Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, D-47057 Duisburg, Germany.

Classifications MeSH