The effect of temperature and excitation energy on Raman scattering in bulkHfS2.

Raman scattering excitation energy dependence phase transition polarization resolved Raman scattering temperature dependence transition metal dichalcogenides

Journal

Journal of physics. Condensed matter : an Institute of Physics journal
ISSN: 1361-648X
Titre abrégé: J Phys Condens Matter
Pays: England
ID NLM: 101165248

Informations de publication

Date de publication:
28 Apr 2023
Historique:
received: 18 01 2023
accepted: 18 04 2023
medline: 19 4 2023
pubmed: 19 4 2023
entrez: 18 4 2023
Statut: epublish

Résumé

Raman scattering (RS) in bulk hafnium disulfide (HfS2) is investigated as a function of temperature (5 K - 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A1gand E

Identifiants

pubmed: 37072005
doi: 10.1088/1361-648X/acce18
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

Creative Commons Attribution license.

Auteurs

Igor Antoniazzi (I)

Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 02-093 Warsaw, Poland.

Natalia Zawadzka (N)

Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 02-093 Warsaw, Poland.

Magdalena Grzeszczyk (M)

Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 02-093 Warsaw, Poland.
Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.

Tomasz Woźniak (T)

Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27 50-370 Wrocław, Poland.

Jordi Ibáñez (J)

Geosciences Barcelona (GEO3BCN), CSIC, Lluís Solé i Sabarís s.n. 08028 Barcelona, Catalonia, Spain.

Zahir Muhammad (Z)

Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, People's Republic of China.

Weisheng Zhao (W)

Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, People's Republic of China.

Maciej R Molas (MR)

Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 02-093 Warsaw, Poland.

Adam Babiński (A)

Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 02-093 Warsaw, Poland.

Classifications MeSH