First-principles investigation of interface phenomena in hafnium-based metal-insulator-metal diodes.
Journal
Nanoscale advances
ISSN: 2516-0230
Titre abrégé: Nanoscale Adv
Pays: England
ID NLM: 101738708
Informations de publication
Date de publication:
16 May 2023
16 May 2023
Historique:
received:
23
10
2022
accepted:
24
03
2023
medline:
19
5
2023
pubmed:
19
5
2023
entrez:
19
5
2023
Statut:
epublish
Résumé
Metal-insulator-metal (MIM) diodes are very interesting in many different applications exploiting environment-friendly renewable energy solutions. Moreover, since the dimensions of such devices are at the nanoscale, the size and the characteristics of their constitutive elements can drastically influence their macroscale performance. As it could be difficult to describe in detail the physical phenomena occurring among materials in nanoscale systems, in this work first-principles calculations have been used to study the structural and electrical properties of three different hafnium oxide (HfO
Identifiants
pubmed: 37205281
doi: 10.1039/d2na00739h
pii: d2na00739h
pmc: PMC10187026
doi:
Types de publication
Journal Article
Langues
eng
Pagination
2748-2755Informations de copyright
This journal is © The Royal Society of Chemistry.
Déclaration de conflit d'intérêts
There are no conflicts to declare.
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