Magneto-strain effects in 2D ferromagnetic van der Waal material CrGeTe[Formula: see text].


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
26 May 2023
Historique:
received: 04 01 2023
accepted: 11 05 2023
medline: 27 5 2023
pubmed: 27 5 2023
entrez: 26 5 2023
Statut: epublish

Résumé

The idea of strain based manipulation of spins in magnetic two-dimensional (2D) van der Waal (vdW) materials leads to the development of new generation spintronic devices. Magneto-strain arises in these materials due to the thermal fluctuations and magnetic interactions which influences both the lattice dynamics and the electronic bands. Here, we report the mechanism of magneto-strain effects in a vdW material CrGeTe[Formula: see text] across the ferromagnetic (FM) transition. We find an isostructural transition in CrGeTe[Formula: see text] across the FM ordering with first order type lattice modulation. Larger in-plane lattice contraction than out-of-plane give rise to magnetocrystalline anisotropy. The signature of magneto-strain effects in the electronic structure are shift of the bands away from the Fermi level, band broadening and the twinned bands in the FM phase. We find that the in-plane lattice contraction increases the on-site Coulomb correlation ([Formula: see text]) between Cr atoms resulting in the band shift. Out-of-plane lattice contraction enhances the [Formula: see text] hybridization between Cr-Ge and Cr-Te atoms which lead to band broadening and strong spin-orbit coupling (SOC) in FM phase. The interplay between [Formula: see text] and SOC out-of-plane gives rise to the twinned bands associated with the interlayer interactions while the in-plane interactions gives rise to the 2D spin polarized states in the FM phase.

Identifiants

pubmed: 37237016
doi: 10.1038/s41598-023-35038-2
pii: 10.1038/s41598-023-35038-2
pmc: PMC10219987
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

8579

Informations de copyright

© 2023. The Author(s).

Références

Sci Rep. 2017 Jun 23;7(1):4120
pubmed: 28646153
Nature. 2014 Jul 24;511(7510):449-51
pubmed: 25056062
Sci Rep. 2021 Mar 8;11(1):4782
pubmed: 33686108
Sci Bull (Beijing). 2018 Jul 15;63(13):825-830
pubmed: 36658961
J Am Chem Soc. 2020 Mar 4;142(9):4438-4444
pubmed: 31976663
Phys Rev B Condens Matter. 1996 Oct 15;54(16):11169-11186
pubmed: 9984901
Phys Chem Chem Phys. 2019 Dec 7;21(45):25220-25225
pubmed: 31697301
Phys Rev B Condens Matter. 1994 Dec 15;50(24):17953-17979
pubmed: 9976227
Nature. 2017 Jun 8;546(7657):265-269
pubmed: 28445468
Nanomicro Lett. 2020 May 4;12(1):106
pubmed: 34138113
Phys Rev Lett. 1996 Oct 28;77(18):3865-3868
pubmed: 10062328
Inorg Chem. 2013 Dec 16;52(24):14326-33
pubmed: 24266590
Science. 2018 Jun 15;360(6394):1214-1218
pubmed: 29724908
Nano Lett. 2019 Nov 13;19(11):7859-7865
pubmed: 31661617
ACS Nano. 2022 May 24;16(5):6960-7079
pubmed: 35442017
ACS Appl Mater Interfaces. 2019 Nov 20;11(46):43320-43329
pubmed: 31647631
Sci Rep. 2022 Mar 1;12(1):3380
pubmed: 35233036
Science. 2018 Jun 15;360(6394):1218-1222
pubmed: 29724904
Sci Rep. 2020 Nov 9;10(1):19377
pubmed: 33168851
Nat Nanotechnol. 2018 Jul;13(7):544-548
pubmed: 29686292
J Phys Condens Matter. 2018 Jul 18;30(28):285303
pubmed: 29855429
RSC Adv. 2020 Jun 25;10(41):24343-24351
pubmed: 35516211
Sci Rep. 2020 Jul 21;10(1):12030
pubmed: 32694707
Nat Nanotechnol. 2018 Jul;13(7):554-559
pubmed: 29967458
Research (Wash D C). 2021 Apr 10;2021:1904839
pubmed: 33937863
Sci Adv. 2021 Sep 10;7(37):eabi7532
pubmed: 34516772
Phys Rev B Condens Matter. 1994 Jun 15;49(23):16223-16233
pubmed: 10010769

Auteurs

Kritika Vijay (K)

Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India.
Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, India.

Durga Sankar Vavilapalli (DS)

Materials Design Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, 581 83, Linköping, Sweden.

Ashok Arya (A)

Glass and Advanced Materials Division, Bhabha Atomic Research Centre, Mumbai, 400085, India.

S K Srivastava (SK)

Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India.

Rashmi Singh (R)

Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India.

Archna Sagdeo (A)

Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India.
Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, India.

S N Jha (SN)

Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, India.
Beamline Development and Application Section, Bhabha Atomic Research Centre, Mumbai, 400085, India.

Kranti Kumar (K)

UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, India.

Soma Banik (S)

Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India. soma@rrcat.gov.in.
Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, India. soma@rrcat.gov.in.

Classifications MeSH