Fast Twist Angle Mapping of Bilayer Graphene Using Spectroscopic Ellipsometric Contrast Microscopy.

ellipsometric contrast microscopy spectroscopic imaging ellipsometry twisted bilayer graphene

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
28 Jun 2023
Historique:
medline: 8 6 2023
pubmed: 8 6 2023
entrez: 8 6 2023
Statut: ppublish

Résumé

Twisted bilayer graphene provides an ideal solid-state model to explore correlated material properties and opportunities for a variety of optoelectronic applications, but reliable, fast characterization of the twist angle remains a challenge. Here we introduce spectroscopic ellipsometric contrast microscopy (SECM) as a tool for mapping twist angle disorder in optically resonant twisted bilayer graphene. We optimize the ellipsometric angles to enhance the image contrast based on measured and calculated reflection coefficients of incident light. The optical resonances associated with van Hove singularities correlate well to Raman and angle-resolved photoelectron emission spectroscopy, confirming the accuracy of SECM. The results highlight the advantages of SECM, which proves to be a fast, nondestructive method for characterization of twisted bilayer graphene over large areas, unlocking process, material, and device screening and cross-correlative measurement potential for bilayer and multilayer materials.

Identifiants

pubmed: 37289669
doi: 10.1021/acs.nanolett.3c00619
pmc: PMC10311600
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

5506-5513

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Auteurs

Teja Potočnik (T)

Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.

Oliver Burton (O)

Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.

Marcel Reutzel (M)

I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany.

David Schmitt (D)

I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany.

Jan Philipp Bange (JP)

I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany.

Stefan Mathias (S)

I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany.

Fabian R Geisenhof (FR)

Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany.

R Thomas Weitz (RT)

I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany.
Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany.

Linyuan Xin (L)

Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.

Hannah J Joyce (HJ)

Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.

Stephan Hofmann (S)

Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.

Jack A Alexander-Webber (JA)

Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.

Classifications MeSH