Experimental demonstration of a skyrmion-enhanced strain-mediated physical reservoir computing system.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
10 Jun 2023
Historique:
received: 29 08 2022
accepted: 02 06 2023
medline: 12 6 2023
pubmed: 11 6 2023
entrez: 10 6 2023
Statut: epublish

Résumé

Physical reservoirs holding intrinsic nonlinearity, high dimensionality, and memory effects have attracted considerable interest regarding solving complex tasks efficiently. Particularly, spintronic and strain-mediated electronic physical reservoirs are appealing due to their high speed, multi-parameter fusion and low power consumption. Here, we experimentally realize a skyrmion-enhanced strain-mediated physical reservoir in a multiferroic heterostructure of Pt/Co/Gd multilayers on (001)-oriented 0.7PbMg

Identifiants

pubmed: 37301906
doi: 10.1038/s41467-023-39207-9
pii: 10.1038/s41467-023-39207-9
pmc: PMC10257712
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

3434

Subventions

Organisme : National Natural Science Foundation of China (National Science Foundation of China)
ID : 52061135105
Organisme : National Natural Science Foundation of China (National Science Foundation of China)
ID : 12074025
Organisme : National Natural Science Foundation of China (National Science Foundation of China)
ID : 11874349
Organisme : National Natural Science Foundation of China (National Science Foundation of China)
ID : 21978110
Organisme : National Natural Science Foundation of China (National Science Foundation of China)
ID : 51772126
Organisme : National Natural Science Foundation of China (National Science Foundation of China)
ID : 52171210
Organisme : National Natural Science Foundation of China (National Science Foundation of China)
ID : 61871008
Organisme : Beijing Nova Program
ID : Z201100006820042
Organisme : Beijing Nova Program
ID : Z211100002121014
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : BA 2181/21-1

Informations de copyright

© 2023. The Author(s).

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Auteurs

Yiming Sun (Y)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Tao Lin (T)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Na Lei (N)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China. na.lei@buaa.edu.cn.

Xing Chen (X)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Wang Kang (W)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Zhiyuan Zhao (Z)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Dahai Wei (D)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Chao Chen (C)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Simin Pang (S)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.

Linglong Hu (L)

Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun, 130103, China.

Liu Yang (L)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Enxuan Dong (E)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Li Zhao (L)

The Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing, 100875, China.

Lei Liu (L)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Zhe Yuan (Z)

The Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing, 100875, China.

Aladin Ullrich (A)

Institute of Physics, University of Augsburg, Augsburg, 86159, Germany.

Christian H Back (CH)

Department of Physics, Technical University of Munich, Garching, 85748, Germany.
Munich Center for Quantum Science and Technology (MCQST), Munich, 80799, Germany.
Centre for Quantum Engineering (ZQE), Technical University of Munich, 85748, Garching, Germany.

Jun Zhang (J)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100049, China.

Dong Pan (D)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Jianhua Zhao (J)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Ming Feng (M)

Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun, 130103, China. mingfeng@jlnu.edu.cn.

Albert Fert (A)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France.

Weisheng Zhao (W)

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

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Classifications MeSH