Mesoscopic 3D Charge Transport in Solution-Processed Graphene-Based Thin Films: A Multiscale Analysis.
Van der Waals thin films
charge transport
disordered systems
graphene
phase transition
weak localization
Journal
Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338
Informations de publication
Date de publication:
Oct 2023
Oct 2023
Historique:
revised:
05
06
2023
received:
17
04
2023
medline:
18
6
2023
pubmed:
18
6
2023
entrez:
18
6
2023
Statut:
ppublish
Résumé
Graphene and related 2D material (GRM) thin films consist of 3D assembly of billions of 2D nanosheets randomly distributed and interacting via van der Waals forces. Their complexity and the multiscale nature yield a wide variety of electrical characteristics ranging from doped semiconductor to glassy metals depending on the crystalline quality of the nanosheets, their specific structural organization ant the operating temperature. Here, the charge transport (CT) mechanisms are studied that are occurring in GRM thin films near the metal-insulator transition (MIT) highlighting the role of defect density and local arrangement of the nanosheets. Two prototypical nanosheet types are compared, i.e., 2D reduced graphene oxide and few-layer-thick electrochemically exfoliated graphene flakes, forming thin films with comparable composition, morphology and room temperature conductivity, but different defect density and crystallinity. By investigating their structure, morphology, and the dependence of their electrical conductivity on temperature, noise and magnetic-field, a general model is developed describing the multiscale nature of CT in GRM thin films in terms of hopping among mesoscopic bricks, i.e., grains. The results suggest a general approach to describe disordered van der Waals thin films.
Identifiants
pubmed: 37330652
doi: 10.1002/smll.202303238
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2303238Subventions
Organisme : Graphene Flagship Core 3 project
ID : GA-881603
Organisme : European Community
Organisme : FET-Proactive Project MoQuaS
ID : GA- 610449
Organisme : ERC Advanced Grant SUPRA2DMAT
ID : GA-833707
Organisme : Italian Ministry for Research (MIUR)
Organisme : Futuro In Ricerca (FIR)
ID : RBFR13YKWX
Organisme : Interdisciplinary Thematic Institute SysChem
Organisme : IdEx Unistra
ID : ANR-10-IDEX-0002
Informations de copyright
© 2023 The Authors. Small published by Wiley-VCH GmbH.
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