Mobility Enhancement in CVD-Grown Monolayer MoS

MoS2 Mobility Strain control TMDC conducting-AFM

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
26 Jul 2023
Historique:
medline: 22 6 2023
pubmed: 22 6 2023
entrez: 22 6 2023
Statut: ppublish

Résumé

The extraordinary mechanical properties of two-dimensional transition-metal dichalcogenides make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of nonuniform strain in modulating optical, electronic, and transport properties of semiconducting, chemical vapor deposited monolayer MoS

Identifiants

pubmed: 37347123
doi: 10.1021/acs.nanolett.3c01774
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6629-6636

Auteurs

Arijit Kayal (A)

School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India.

Sraboni Dey (S)

School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India.

Harikrishnan G (H)

School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India.

Renjith Nadarajan (R)

School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India.

Shashwata Chattopadhyay (S)

School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India.

Joy Mitra (J)

School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala 695551, India.

Classifications MeSH