Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates.

AlN face-to-face annealed sputter-deposited AlN hydride vapor-phase epitaxy metalorganic vapor-phase epitaxy nanopatterned sapphire substrate transmission electron microscopy

Journal

Journal of electronic materials
ISSN: 0361-5235
Titre abrégé: J Electron Mater
Pays: United States
ID NLM: 101688348

Informations de publication

Date de publication:
29 Mar 2023
Historique:
received: 12 12 2022
accepted: 02 03 2023
pubmed: 26 6 2023
medline: 26 6 2023
entrez: 26 6 2023
Statut: aheadofprint

Résumé

Micro- and nanostructures in vapor-phase-grown AlN on face-to-face annealed sputtered AlN (FFA Sp-AlN) templates formed on nanopatterned sapphire substrates (NPSS) were comprehensively analyzed using transmission electron microscopy. The comparison between metal-organic vapor-phase epitaxy-grown AlN/FFA Sp-AlN/hole-type NPSS (Sample MOH) and hydride vapor-phase epitaxy-grown AlN/FFA Sp-AlN/cone-type NPSS (Sample HVC) showed apparent differences in the morphology of dislocation propagation, presence of voids, shape of polarity inversion boundaries, and crystal structure on the slope region of NPSS. Notably, cross-sectional and plan-view observations revealed that the quality of FFA Sp-AlN significantly affects the threading dislocation density in the vapor-phase-grown layer. At the slope region of the AlN/NPSS interface, The online version contains supplementary material available at 10.1007/s11664-023-10348-3.

Identifiants

pubmed: 37363789
doi: 10.1007/s11664-023-10348-3
pii: 10348
pmc: PMC10054194
doi:

Types de publication

Journal Article

Langues

eng

Pagination

1-10

Informations de copyright

© The Minerals, Metals & Materials Society 2023, Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Déclaration de conflit d'intérêts

Conflict of interestThe authors declare that they have no conflict of interest.

Auteurs

Yudai Nakanishi (Y)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 Japan.

Yusuke Hayashi (Y)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 Japan.

Takeaki Hamachi (T)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 Japan.

Tetsuya Tohei (T)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 Japan.

Yoshikata Nakajima (Y)

R3 Institute for Newly-Emerging Science Design, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 Japan.

Shiyu Xiao (S)

Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507 Japan.

Kanako Shojiki (K)

Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507 Japan.
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 Japan.

Hideto Miyake (H)

Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507 Japan.

Akira Sakai (A)

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 Japan.

Classifications MeSH