Magnetization Control of Zero-Field Intrinsic Superconducting Diode Effect.

asymmetric artificial superlattices exchange-spin-split superconductors spin−orbit coupling superconducting diode effects topological superconductors

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Oct 2023
Historique:
revised: 28 06 2023
received: 02 05 2023
pubmed: 6 7 2023
medline: 6 7 2023
entrez: 6 7 2023
Statut: ppublish

Résumé

The superconducting diode effect (SDE), which causes a superconducting state in one direction and a normal-conducting state in another, has significant potential for developing ultralow power consumption circuits and non-volatile memory. However, the practical control of the SDE necessities the precise tuning of current, temperature, magnetic field, or magnetism. Therefore, the mechanisms of the SDE must be understood to develop novel materials and devices capable of realizing the SDE under more controlled and robust conditions. This study demonstrates an intrinsic zero-field SDE with an efficiency of up to 40% in Fe/Pt-inserted non-centrosymmetric Nb/V/Ta superconducting artificial superlattices. The polarity and magnitude of the zero-field SDE are controllable by the direction of magnetization, indicating that the effective exchange field acts on Cooper pairs. Furthermore, the first-principles calculation indicates that the SDE can be enhanced by an asymmetric configuration of proximity induced magnetic moments in superconducting layers, which induces a magnetic toroidal moment. This study has important implications regarding the development of novel materials and devices that can effectively control the SDE. Moreover, the magnetization control of the SDE is expected to aid in the designing of superconducting quantum devices and establishing a material platform for topological superconductors.

Identifiants

pubmed: 37410358
doi: 10.1002/adma.202304083
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2304083

Subventions

Organisme : JSPS KAKENHI
ID : 15H05702
Organisme : JSPS KAKENHI
ID : 20H05665
Organisme : JSPS KAKENHI
ID : 21K13883
Organisme : JSPS KAKENHI
ID : 21K18145
Organisme : JSPS KAKENHI
ID : 20H00337
Organisme : JSPS KAKENHI
ID : 20H00349
Organisme : MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS)
ID : JPJ011438
Organisme : Research Institute of Electrical Communication, Tohoku University
Organisme : Collaborative Research Program of the Institute for Chemical Research, Kyoto University
Organisme : Futaba Foundation's Futaba Research Grant Program
Organisme : Iketani Science and Technology Foundation
Organisme : Sumitomo Foundation
Organisme : Tokuyama Science Foundation
Organisme : Iwatani Naoji Foundation

Informations de copyright

© 2023 Wiley-VCH GmbH.

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Auteurs

Hideki Narita (H)

Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.

Jun Ishizuka (J)

Faculty of Engineering, Niigata University, Ikarashi, Niigata, 950-2181, Japan.

Daisuke Kan (D)

Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.
Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan.

Yuichi Shimakawa (Y)

Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.
Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan.

Youichi Yanase (Y)

Department of Physics, Graduate School of Science, Kyoto University, Kyoto, 606-8502, Japan.
Institute for Molecular Science, Okazaki, 444-0867, Japan.

Teruo Ono (T)

Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.
Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan.
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, 560-0043, Japan.

Classifications MeSH