Defect pairing in Fe-doped SnS van der Waals crystals: a photoemission and scanning tunneling microscopy study.


Journal

Nanoscale
ISSN: 2040-3372
Titre abrégé: Nanoscale
Pays: England
ID NLM: 101525249

Informations de publication

Date de publication:
10 Aug 2023
Historique:
medline: 28 7 2023
pubmed: 28 7 2023
entrez: 28 7 2023
Statut: epublish

Résumé

We investigate the effect of low concentrations of iron on the physical properties of SnS van der Waals crystals grown from the melt. By means of scanning tunneling microscopy (STM) and photoemission spectroscopy we study Fe-induced defects and observe an electron doping effect in the band structure of the native p-type SnS semiconductor. Atomically resolved and bias dependent STM data of characteristic defects are compared to

Identifiants

pubmed: 37503562
doi: 10.1039/d3nr01905e
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

13110-13119

Auteurs

Damla Yesilpinar (D)

Institute of Physics, AV ČR, Na Slovance 1999/2, 182 21 Praha 8, Czechia. honolka@fzu.cz.

Martin Vondráček (M)

Institute of Physics, AV ČR, Na Slovance 1999/2, 182 21 Praha 8, Czechia. honolka@fzu.cz.

Patrik Čermák (P)

Faculty of Chemical Technology, University of Pardubice, Studentská 573, 532 10 Pardubice, Czechia.

Harry Mönig (H)

Physikalisches Institut, Wilhelm-Klemm Str. 10, 48149 Münster, DE, Germany.

Jaromír Kopeček (J)

Institute of Physics, AV ČR, Na Slovance 1999/2, 182 21 Praha 8, Czechia. honolka@fzu.cz.

Ondřej Caha (O)

Department of Condensed Matter Physics, Masaryk University, Žerotínovo nám. 617/9, 601 77 Brno, Czechia.

Karel Carva (K)

Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 121 16 Prague, Czechia.

Čestmír Drašar (Č)

Faculty of Chemical Technology, University of Pardubice, Studentská 573, 532 10 Pardubice, Czechia.

Jan Honolka (J)

Institute of Physics, AV ČR, Na Slovance 1999/2, 182 21 Praha 8, Czechia. honolka@fzu.cz.

Classifications MeSH