In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication.
AlGaN/GaN
C–V frequency dispersion
MIS-HEMTs
current collapse
dynamic on-resistance
in situ H-radical treatment
interface traps
pulse-mode stress
Journal
Micromachines
ISSN: 2072-666X
Titre abrégé: Micromachines (Basel)
Pays: Switzerland
ID NLM: 101640903
Informations de publication
Date de publication:
21 Jun 2023
21 Jun 2023
Historique:
received:
07
05
2023
revised:
16
06
2023
accepted:
19
06
2023
medline:
29
7
2023
pubmed:
29
7
2023
entrez:
29
7
2023
Statut:
epublish
Résumé
In this work, we demonstrated a low current collapse normally on Al
Identifiants
pubmed: 37512589
pii: mi14071278
doi: 10.3390/mi14071278
pmc: PMC10385801
pii:
doi:
Types de publication
Journal Article
Langues
eng
Références
ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7725-7734
pubmed: 33529524
Micromachines (Basel). 2021 Sep 27;12(10):
pubmed: 34683210
Micromachines (Basel). 2021 Nov 25;12(12):
pubmed: 34945290