Device-Algorithm Co-Optimization for an On-Chip Trainable Capacitor-Based Synaptic Device with IGZO TFT and Retention-Centric Tiki-Taka Algorithm.
device-algorithm co-optimization
in-memory computing
indium gallium zinc oxide thin film transistor (IGZO TFT)
neuromorphic
tiki-taka algorithm
Journal
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
ISSN: 2198-3844
Titre abrégé: Adv Sci (Weinh)
Pays: Germany
ID NLM: 101664569
Informations de publication
Date de publication:
Oct 2023
Oct 2023
Historique:
revised:
28
06
2023
received:
11
05
2023
medline:
10
8
2023
pubmed:
10
8
2023
entrez:
9
8
2023
Statut:
ppublish
Résumé
Analog in-memory computing synaptic devices are widely studied for efficient implementation of deep learning. However, synaptic devices based on resistive memory have difficulties implementing on-chip training due to the lack of means to control the amount of resistance change and large device variations. To overcome these shortcomings, silicon complementary metal-oxide semiconductor (Si-CMOS) and capacitor-based charge storage synapses are proposed, but it is difficult to obtain sufficient retention time due to Si-CMOS leakage currents, resulting in a deterioration of training accuracy. Here, a novel 6T1C synaptic device using only n-type indium gaIlium zinc oxide thin film transistor (IGZO TFT) with low leakage current and a capacitor is proposed, allowing not only linear and symmetric weight update but also sufficient retention time and parallel on-chip training operations. In addition, an efficient and realistic training algorithm to compensate for any remaining device non-idealities such as drifting references and long-term retention loss is proposed, demonstrating the importance of device-algorithm co-optimization.
Identifiants
pubmed: 37559176
doi: 10.1002/advs.202303018
pmc: PMC10582414
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2303018Subventions
Organisme : National Research Foundation of Korea funded by Ministry of Science and ICT
ID : NRF-2020M3F3A2A01081240
Organisme : National Research Foundation of Korea funded by Ministry of Science and ICT
ID : NRF-2021M3F3A2A02037889
Informations de copyright
© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.
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