Device-Algorithm Co-Optimization for an On-Chip Trainable Capacitor-Based Synaptic Device with IGZO TFT and Retention-Centric Tiki-Taka Algorithm.

device-algorithm co-optimization in-memory computing indium gallium zinc oxide thin film transistor (IGZO TFT) neuromorphic tiki-taka algorithm

Journal

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
ISSN: 2198-3844
Titre abrégé: Adv Sci (Weinh)
Pays: Germany
ID NLM: 101664569

Informations de publication

Date de publication:
Oct 2023
Historique:
revised: 28 06 2023
received: 11 05 2023
medline: 10 8 2023
pubmed: 10 8 2023
entrez: 9 8 2023
Statut: ppublish

Résumé

Analog in-memory computing synaptic devices are widely studied for efficient implementation of deep learning. However, synaptic devices based on resistive memory have difficulties implementing on-chip training due to the lack of means to control the amount of resistance change and large device variations. To overcome these shortcomings, silicon complementary metal-oxide semiconductor (Si-CMOS) and capacitor-based charge storage synapses are proposed, but it is difficult to obtain sufficient retention time due to Si-CMOS leakage currents, resulting in a deterioration of training accuracy. Here, a novel 6T1C synaptic device using only n-type indium gaIlium zinc oxide thin film transistor (IGZO TFT) with low leakage current and a capacitor is proposed, allowing not only linear and symmetric weight update but also sufficient retention time and parallel on-chip training operations. In addition, an efficient and realistic training algorithm to compensate for any remaining device non-idealities such as drifting references and long-term retention loss is proposed, demonstrating the importance of device-algorithm co-optimization.

Identifiants

pubmed: 37559176
doi: 10.1002/advs.202303018
pmc: PMC10582414
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2303018

Subventions

Organisme : National Research Foundation of Korea funded by Ministry of Science and ICT
ID : NRF-2020M3F3A2A01081240
Organisme : National Research Foundation of Korea funded by Ministry of Science and ICT
ID : NRF-2021M3F3A2A02037889

Informations de copyright

© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.

Références

Front Neurosci. 2022 Jan 06;15:767953
pubmed: 35069098
Front Artif Intell. 2021 Sep 09;4:699148
pubmed: 34568813
Proc Natl Acad Sci U S A. 1982 Apr;79(8):2554-8
pubmed: 6953413
Nanotechnology. 2013 Sep 27;24(38):382001
pubmed: 23999572
Nat Electron. 2020;3(7):
pubmed: 33367204
Adv Sci (Weinh). 2023 Oct;10(29):e2303018
pubmed: 37559176
IEEE Electron Device Lett. 2017 Jun;38(6):736-739
pubmed: 28890601
Nat Commun. 2014 Jul 24;5:4289
pubmed: 25056141
Front Artif Intell. 2022 May 09;5:891624
pubmed: 35615470
Front Neurosci. 2016 Jul 21;10:333
pubmed: 27493624
Nanotechnology. 2015 Nov 13;26(45):455204
pubmed: 26491032
Sci Rep. 2018 Feb 8;8(1):2638
pubmed: 29422641
Nature. 2015 May 7;521(7550):61-4
pubmed: 25951284
Nature. 2018 Jun;558(7708):60-67
pubmed: 29875487
Front Neurosci. 2020 Feb 26;14:103
pubmed: 32174807

Auteurs

Jongun Won (J)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Jaehyeon Kang (J)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Sangjun Hong (S)

Device Solutions, Samsung Electronics, Pyeongtaek, 17786, Republic of Korea.

Narae Han (N)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Minseung Kang (M)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Yeaji Park (Y)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Youngchae Roh (Y)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Hyeong Jun Seo (HJ)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Changhoon Joe (C)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Ung Cho (U)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Minil Kang (M)

Department of Semiconductor System Engineering, Korea University, Seoul, 02841, Republic of Korea.

Minseong Um (M)

School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea.

Kwang-Hee Lee (KH)

Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon-si, 16678, Republic of Korea.

Jee-Eun Yang (JE)

Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon-si, 16678, Republic of Korea.

Moonil Jung (M)

Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon-si, 16678, Republic of Korea.

Hyung-Min Lee (HM)

School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea.

Saeroonter Oh (S)

Department of Electrical and Electronic Engineering, Hanyang University, Ansan, 15588, Republic of Korea.

Sangwook Kim (S)

Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon-si, 16678, Republic of Korea.

Sangbum Kim (S)

Department of Materials Science & Engineering, Inter-university Semiconductor Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Classifications MeSH