Polymer Nanoparticles Applied in the CMP (Chemical Mechanical Polishing) Process of Chip Wafers for Defect Improvement and Polishing Removal Rate Response.
aggregation ratio
block copolymer
chemical mechanical polishing
colloidal silica
fume silica
particle shape
particle size
particle solid content
polishing defect counts
polishing removal rates
polishing uniformity
polymer nanoparticle
polystyrene
Journal
Polymers
ISSN: 2073-4360
Titre abrégé: Polymers (Basel)
Pays: Switzerland
ID NLM: 101545357
Informations de publication
Date de publication:
27 Jul 2023
27 Jul 2023
Historique:
received:
27
06
2023
revised:
21
07
2023
accepted:
24
07
2023
medline:
12
8
2023
pubmed:
12
8
2023
entrez:
12
8
2023
Statut:
epublish
Résumé
Chemical mechanical planarization (CMP) is a wafer-surface-polishing planarization technique based on a wet procedure that combines chemical and mechanical forces to fully flatten materials for semiconductors to be mounted on the wafer surface. The achievement of devices of a small nano-size with few defects and good wafer yields is essential in enabling IC chip manufacturers to enhance their profits and become more competitive. The CMP process is applied to produce many IC generations of nanometer node, or those of even narrower line widths, for a better performance and manufacturing feasibility. Slurry is a necessary supply for CMP. The most critical component in slurry is an abrasive particle which affects the removal rates, uniformity, defects, and removal selectivity for the materials on the wafer surface. The polishing abrasive is the source of mechanical force. Conventional CMP abrasives consist of colloidal silica, fume silica or other inorganic polishing particles in the slurries. We were the first to systematically study nanoparticles of the polymer type applied in CMP, and to compare traditional inorganic and polymer nanoparticles in terms of polishing performance. In particular, the polymer nanoparticle size, shape, solid content dosing ratio, and molecular types were examined. The polishing performance was measured for the polishing removal rates, total defect counts, and uniformity. We found that the polymer nanoparticles significantly improved the total defect counts and uniformity, although the removal rates were lower than the rates obtained using inorganic nanoparticles. However, the lower removal rates of the polymer nanoparticles are acceptable due to the thinner film materials used for smaller IC device nodes, which may be below 10 nm. We also found that the physical properties of polymer nanoparticles, in terms of their size, shape, and different types of copolymer molecules, cause differences in the polishing performance. Meanwhile, we used statistical analysis software to analyze the data on the polishing removal rates and defect counts. This method helps to determine the most suitable polymer nanoparticle for use as a slurry abrasive, and improves the reliability trends for defect counts.
Identifiants
pubmed: 37571091
pii: polym15153198
doi: 10.3390/polym15153198
pmc: PMC10421431
pii:
doi:
Types de publication
Journal Article
Langues
eng
Références
J Pharm Biomed Anal. 2000 Aug 15;23(2-3):581-9
pubmed: 10933552