Single, Double and ETL-Sandwiched PVPy Interlayer Effect on Charge Injection Balance and Performance of Inverted Quantum Dot Light-Emitting Diodes.

current efficiency electron transport layer (ETL) hole transport layer (HTL) maximum external quantum efficiency (EQE) maximum luminance reference reference device turn-on voltage (Von)

Journal

Polymers
ISSN: 2073-4360
Titre abrégé: Polymers (Basel)
Pays: Switzerland
ID NLM: 101545357

Informations de publication

Date de publication:
04 Aug 2023
Historique:
received: 06 07 2023
revised: 31 07 2023
accepted: 03 08 2023
medline: 12 8 2023
pubmed: 12 8 2023
entrez: 12 8 2023
Statut: epublish

Résumé

A desire to achieve optimal electron transport from the electron transport layer (ETL) towards the emissive layer (EML) is an important research factor for the realization of high performance quantum dot light-emitting diodes (QD-LEDs). In this paper, we study the effect of a single, double, and electron transport layer sandwiched Poly(4-vinylpyridine) (PVPy here on) on the charge injection balance and on the overall device performance of InP-based red quantum dot light emitting diodes (red QD-LEDs). The results showed general improvement of device characteristic performance metrics such as operational life with incorporation of a PVPy interlayer. The best performance was observed at a lower concentration of PVPy (@ 0.1 mg/mL) in interlayer with continual worsening in performance as PVPy concentration in the interlayer increased in other fabricated devices. The AFM images obtained for the different materials reported improved surface morphology and overall improved surface properties, but decreased overall device performance as PVPy concentration in interlayer was increased. Furthermore, we fabricated two special devices: in the first special device, a single 0.1 mg/mL PVPy sandwiched between two ZnO ETL layers, and in the second special device, two 0.1 mg/mL PVPy interlayers were inter-sandwiched between two ZnO ETL layers. Particular emphasis was placed on monitoring the maximum obtained EQE and the maximum obtained luminance of all the devices. The first special device showed better all-round improved performance than the second special device compared to the reference device (without PVPy) and the device with a single 0.1 mg/mL PVPy interlayer stacked between ZnO ETL and the emissive layer.

Identifiants

pubmed: 37571201
pii: polym15153308
doi: 10.3390/polym15153308
pmc: PMC10422574
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : Ministry of Trade, Industry and Energy
ID : 20010464
Organisme : Ministry of Trade, Industry and Energy
ID : 20016195
Organisme : National Research Foundation
ID : 2021RIS-003
Organisme : GNU-Samsung Display Center
ID : GNU-Samsung Display Center
Organisme : Gyeongsang National University
ID : Gyeongsang National University

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Auteurs

Collins Kiguye (C)

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

Woo Jin Jeong (WJ)

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

Gwang Hyun Jeong (GH)

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

Jin Ho Park (JH)

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

Hee Jung Kwak (HJ)

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

Gun Woong Kim (GW)

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

Seok Hwan Jang (SH)

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

Jun Young Kim (JY)

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

Classifications MeSH