Diverse long-term potentiation and depression based on multilevel LiSiO

LiSiO x memristor neuromorphic computing pattern recognition synaptic simulation

Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
04 Sep 2023
Historique:
received: 23 02 2023
accepted: 15 08 2023
medline: 17 8 2023
pubmed: 17 8 2023
entrez: 16 8 2023
Statut: epublish

Résumé

Memristor-based neuromorphic computing is expected to overcome the bottleneck of von Neumann architecture. An artificial synaptic device with continuous conductance variation is essential for implementing bioinspired neuromorphic systems. In this work, a memristor based on Pt/LiSiO

Identifiants

DOI: 10.1088/1361-6528/acf0c8 PMID: 37586343
pubmed: 37586343
doi: 10.1088/1361-6528/acf0c8
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

© 2023 IOP Publishing Ltd.

Auteurs

Zeyu Wu (Z)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Zewen Li (Z)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Xin Lin (X)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Xin Shan (X)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Gang Chen (G)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Chen Yang (C)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Xuanyu Zhao (X)

School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.

Zheng Sun (Z)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Kai Hu (K)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Fang Wang (F)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Tianling Ren (T)

Beijing National Research Center for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China.

Zhitang Song (Z)

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.

Kailiang Zhang (K)

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Classifications MeSH