Exploring the Evolution of Organofluorine-Containing Compounds during Simulated Photolithography Experiments.

PFAS electronics fabrication industrial wastewater photolithography semiconductor

Journal

Environmental science & technology
ISSN: 1520-5851
Titre abrégé: Environ Sci Technol
Pays: United States
ID NLM: 0213155

Informations de publication

Date de publication:
29 08 2023
Historique:
medline: 31 8 2023
pubmed: 17 8 2023
entrez: 17 8 2023
Statut: ppublish

Résumé

One potential source of per- and polyfluoroalkyl substances (PFASs) in electronics fabrication wastewater are the organofluorine-containing compounds used in photolithography materials such as photoresists and top antireflective coatings (TARCs). However, the exact identities of these constituents are unknown and transformation reactions that may occur during photolithography may result in the formation of unknown or unexpected PFASs. To address this knowledge gap, we acquired five commercially relevant photolithography materials, characterized the occurrence of organofluorine-containing compounds in each material, and performed simulated photolithography experiments to stimulate any potential transformation reactions. We found that photoresists and TARCs have total fluorine (TF) concentrations in the g L

Identifiants

pubmed: 37590049
doi: 10.1021/acs.est.3c03410
doi:

Substances chimiques

Fluorine 284SYP0193
Wastewater 0

Types de publication

Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S.

Langues

eng

Sous-ensembles de citation

IM

Pagination

12819-12828

Auteurs

Paige Jacob (P)

School of Civil and Environmental Engineering, Cornell University, Ithaca, New York 14853, United States.

Damian E Helbling (DE)

School of Civil and Environmental Engineering, Cornell University, Ithaca, New York 14853, United States.

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Classifications MeSH