Electrical detection of the flat-band dispersion in van der Waals field-effect structures.


Journal

Nature nanotechnology
ISSN: 1748-3395
Titre abrégé: Nat Nanotechnol
Pays: England
ID NLM: 101283273

Informations de publication

Date de publication:
Dec 2023
Historique:
received: 18 01 2023
accepted: 17 07 2023
medline: 18 8 2023
pubmed: 18 8 2023
entrez: 17 8 2023
Statut: ppublish

Résumé

Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat-band position in field-effect structures are slowing down the investigation of their properties. In this work, we use indium selenide (InSe) as a flat-band system due to a van Hove singularity at the valence-band edge in a few-layer form of the material without the requirement of a twist angle. We investigate tunnelling photocurrents in gated few-layer InSe structures and relate them to ambipolar transport and photoluminescence measurements. We observe an appearance of a sharp change in tunnelling mechanisms due to the presence of the van Hove singularity at the flat band. We further corroborate our findings by studying tunnelling currents as a reliable probe for the flat-band position up to room temperature. Our results create an alternative approach to studying flat-band systems in heterostructures of two-dimensional materials.

Identifiants

pubmed: 37591936
doi: 10.1038/s41565-023-01489-x
pii: 10.1038/s41565-023-01489-x
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

1416-1422

Subventions

Organisme : Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (Swiss National Science Foundation)
ID : 172543
Organisme : Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (Swiss National Science Foundation)
ID : 175822
Organisme : Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (Swiss National Science Foundation)
ID : 177007
Organisme : Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (Swiss National Science Foundation)
ID : 164015
Organisme : EC | EU Framework Programme for Research and Innovation H2020 | H2020 Euratom (H2020 Euratom Research and Training Programme 2014-2018)
ID : 956813
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : JPMXP0112101001
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : JP20H00354
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : JP19H05790

Informations de copyright

© 2023. The Author(s).

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Auteurs

Gabriele Pasquale (G)

Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

Edoardo Lopriore (E)

Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

Zhe Sun (Z)

Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

Kristiāns Čerņevičs (K)

Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

Fedele Tagarelli (F)

Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

Kenji Watanabe (K)

Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan.

Takashi Taniguchi (T)

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan.

Oleg V Yazyev (OV)

Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

Andras Kis (A)

Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland. andras.kis@epfl.ch.
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland. andras.kis@epfl.ch.

Classifications MeSH