Lattice modulation strategies for 2D material assisted epitaxial growth.
2D material
Remote epitaxy
vdW epitaxy
Journal
Nano convergence
ISSN: 2196-5404
Titre abrégé: Nano Converg
Pays: England
ID NLM: 101695675
Informations de publication
Date de publication:
25 Aug 2023
25 Aug 2023
Historique:
received:
16
06
2023
accepted:
13
08
2023
medline:
26
8
2023
pubmed:
26
8
2023
entrez:
25
8
2023
Statut:
epublish
Résumé
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel optoelectronics and electronics development and opens a pathway for the next-generation integrated system fabrication. Studying and understanding the lattice modulation mechanism in 2D-material-assisted epitaxy could greatly benefit its practical application and further development. In this review, we overview the tremendous experimental and theoretical findings in varied 2D-material-assisted epitaxy. The lattice guidance mechanism and corresponding epitaxial relationship construction strategy in remote epitaxy, van der Waals epitaxy, and quasi van der Waals epitaxy are discussed, respectively. Besides, the possible application scenarios and future development directions of 2D-material-assisted epitaxy are also given. We believe the discussions and perspectives exhibited here could help to provide insight into the essence of the 2D-material-assisted epitaxy and motivate novel structure design and offer solutions to heterogeneous integration via the 2D-material-assisted epitaxy method.
Identifiants
pubmed: 37626161
doi: 10.1186/s40580-023-00388-0
pii: 10.1186/s40580-023-00388-0
pmc: PMC10457265
doi:
Types de publication
Journal Article
Review
Langues
eng
Pagination
39Subventions
Organisme : National Key Research and Development Program of China
ID : 2022YFB3608100
Organisme : National Natural Science Foundation of China
ID : 61974140
Organisme : National Natural Science Foundation of China
ID : 62174157
Informations de copyright
© 2023. Korea Nanotechnology Research Society (KoNTRS).
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