Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si
amorphous silicon nitride
flash memory
intrinsic charge trapping sites
nonradiative multi-phonon model
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
09 Aug 2023
09 Aug 2023
Historique:
received:
04
07
2023
revised:
31
07
2023
accepted:
04
08
2023
medline:
26
8
2023
pubmed:
26
8
2023
entrez:
26
8
2023
Statut:
epublish
Résumé
Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is still unclear. Most prominently, the Si dangling bond or
Identifiants
pubmed: 37630870
pii: nano13162286
doi: 10.3390/nano13162286
pmc: PMC10460034
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : European Union's Horizon 2020
ID : 871813
Organisme : Christian Doppler Research Association
ID : 1577886
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