Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO
calcium stannate
chemical doping
density functional calculations
high-voltage electronics
hybrid molecular beam epitaxy (hMBE)
metal−semiconductor field-effect transistor (MESFET)
ultrawide band gap (UWBG) semiconductors
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
12 Sep 2023
12 Sep 2023
Historique:
medline:
28
8
2023
pubmed:
28
8
2023
entrez:
28
8
2023
Statut:
ppublish
Résumé
The alkaline earth stannates are touted for their wide band gaps and the highest room-temperature electron mobilities among all of the perovskite oxides. CaSnO
Identifiants
pubmed: 37638732
doi: 10.1021/acsnano.3c04003
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM