Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO

calcium stannate chemical doping density functional calculations high-voltage electronics hybrid molecular beam epitaxy (hMBE) metal−semiconductor field-effect transistor (MESFET) ultrawide band gap (UWBG) semiconductors

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
12 Sep 2023
Historique:
medline: 28 8 2023
pubmed: 28 8 2023
entrez: 28 8 2023
Statut: ppublish

Résumé

The alkaline earth stannates are touted for their wide band gaps and the highest room-temperature electron mobilities among all of the perovskite oxides. CaSnO

Identifiants

pubmed: 37638732
doi: 10.1021/acsnano.3c04003
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

16912-16922

Auteurs

Fengdeng Liu (F)

Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.

Prafful Golani (P)

Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.

Tristan K Truttmann (TK)

Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.

Igor Evangelista (I)

Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States.

Michelle A Smeaton (MA)

Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.

David Bugallo (D)

Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States.
Centro de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS), Universidade de Santiago de Compostela, Santiago de Compostela, 15782, Spain.

Jiaxuan Wen (J)

Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.

Anusha Kamath Manjeshwar (AK)

Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.

Steven J May (SJ)

Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States.

Lena F Kourkoutis (LF)

School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States.
Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States.

Anderson Janotti (A)

Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States.

Steven J Koester (SJ)

Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.

Bharat Jalan (B)

Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States.

Classifications MeSH