One-Step Passivation of Both Sulfur Vacancies and SiO
MoS2
bulk trap
concurrent passivation
interface trap
proton injection
sulfur vacancy
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
13 Sep 2023
13 Sep 2023
Historique:
medline:
30
8
2023
pubmed:
30
8
2023
entrez:
30
8
2023
Statut:
ppublish
Résumé
Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS
Identifiants
pubmed: 37647420
doi: 10.1021/acs.nanolett.3c01753
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM