Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits.

density functional theory hybrid functionals point defects quantum dots qubits

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
13 Sep 2023
Historique:
medline: 31 8 2023
pubmed: 31 8 2023
entrez: 31 8 2023
Statut: ppublish

Résumé

Spin qubits based on Si and Si

Identifiants

pubmed: 37651689
doi: 10.1021/acsami.3c06725
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

43111-43123

Auteurs

Joel B Varley (JB)

Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, United States.

Keith G Ray (KG)

Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, United States.

Vincenzo Lordi (V)

Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, United States.

Classifications MeSH