Monolithic 3D Integration of Analog RRAM-Based Computing-in-Memory and Sensor for Energy-Efficient Near-Sensor Computing.
InGaZnOx field-effect transistor
computing-in-memory
monolithic 3D integration
near-sensor computing
resistive random-access memory
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
31 Aug 2023
31 Aug 2023
Historique:
revised:
14
08
2023
received:
22
03
2023
pubmed:
1
9
2023
medline:
1
9
2023
entrez:
31
8
2023
Statut:
aheadofprint
Résumé
In the era of the Internet of Things, vast amounts of data generated at sensory nodes impose critical challenges on the data-transfer bandwidth and energy efficiency of computing hardware. A near-sensor computing (NSC) architecture places the processing units closer to the sensors such that the generated data can be processed almost in situ with high efficiency. This study demonstrates the monolithic three-dimensional (M3D) integration of a photosensor array, analog computing-in-memory (CIM), and Si complementary metal-oxide-semiconductor (CMOS) logic circuits, named M3D-SAIL. This approach exploits the high-bandwidth on-chip data transfer and massively parallel CIM cores to realize an energy-efficient NSC architecture. The 1st layer of the Si CMOS circuits serves as the control logic and peripheral circuits. The 2nd layer comprises a 1 k-bit one-transistor-one-resistor (1T1R) array with InGaZnO
Identifiants
pubmed: 37652463
doi: 10.1002/adma.202302658
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2302658Subventions
Organisme : Natural Science Foundation of China
ID : 92264201
Organisme : Natural Science Foundation of China
ID : 61974081
Organisme : Natural Science Foundation of China
ID : 62025111
Organisme : Natural Science Foundation of China
ID : 62104130
Organisme : STI 2030-Major Projects
ID : 2022ZD0210200
Informations de copyright
© 2023 Wiley-VCH GmbH.
Références
S. Choi, Y. Kim, T. Van Nguyen, W. H. Jeong, K. S. Min, B. J. Choi, Adv. Electron. Mater. 2021, 7, 2100050.
F. Zhou, Y. Chai, Nat. Electron. 2020, 3, 664.
K. Yasumoto, H. Yamaguchi, H. Shigeno, Joho Kanri 2016, 24, 195.
S. Wang, Y. Hou, F. Gao, X. Ji, 2016 IEEE 3rd World Forum Internet Things, IEEE, Reston, VA, USA 2016, p. 639.
S. K. Vishwakarma, P. Upadhyaya, B. Arun, 2019 4th Int. Conf. Internet Things Smart Innov. Usage, IEEE, Ghaziabad, India 2016, p. 417.
C. Choi, H. Kim, J. H. Kang, M. K. Song, H. Yeon, C. S. Chang, J. M. Suh, J. Shin, K. Lu, B. I. Park, Y. Kim, H. E. Lee, D. Lee, J. Lee, I. Jang, S. Pang, K. Ryu, S. H. Bae, Y. Nie, H. S. Kum, M. C. Park, S. Lee, H. J. Kim, H. Wu, P. Lin, J. Kim, Nat. Electron. 2022, 5, 386.
A. Safa, J. Van Assche, M. D. Alea, F. Catthoor, G. G. E. Gielen, IEEE Micro 2022, 42, 88.
T. H. Hsu, Y. R. Chen, R. S. Liu, C. C. Lo, K. T. Tang, M. F. Chang, C. C. Hsieh, IEEE J. Solid-State Circuits 2020, 56, 1588.
M. Gottardi, N. Massari, S. A. Jawed, IEEE J. Solid-State Circuits 2009, 44, 1582.
C. Lee, W. Chao, S. Lee, J. Hone, A. Molnar, S. H. Hong, IEEE Trans. Circuits Syst. 2015, 62, 1043.
H. Tsugawa, H. Takahashi, R. Nakamura, T. Umebayashi, T. Ogita, H. Okano, K. Iwase, H. Kawashima, IEEE Int. Electron Devices Meet. 2017, 3, 2.
Mohamed M., S. Aly, M. Gao, G. Hill, C.-S. Lee, G. Pitner, M. M. Shulaker, T. F. Wu, M. Asheghi, Computer 2015, 48, 24.
K. Chang, A. Koneru, K. Chakrabarty, S. K. Lim, Proc. 9th Int. Congr. Coron. Artery Dis.: 2011 Update, IEEE, Irvine, CA, USA 2017, p. 805.
J. Jiang, K. Parto, W. Cao, K. Banerjee, IEEE J. Electron Devices Soc. 2019, 7, 878.
S. Liu, G. Shan, J. Semicond. 2018, 39, 026003.
M. M. S. Aly, M. Gao, G. Hills, C. S. Lee, G. Pitner, M. M. Shulaker, T. F. Wu, M. Asheghi, J. Bokor, F. Franchetti, K. E. Goodson, C. Kozyrakis, I. Markov, K. Olukotun, L. Pileggi, E. Pop, J. Rabaey, C. Ré, H. S. P. Wong, S. Mitra, Computer (Long Beach, Calif.) 2015, 48, 24.
Y. Liu, W. Luk, D. Friedman, ISSCC, IEEE, San Francisco, CA, USA 2012, p. 142.
M. M. Shulaker, G. Hills, R. S. Park, R. T. Howe, K. Saraswat, H. S. P. Wong, S. Mitra, Nature 2017, 547, 74.
H. Han, R. Choi, S. O. Jung, S. W. Chung, B. J. Cho, S. C. Song, C. Choi, IEEE Int. Electron Devices Meet. 2020, 15, 6.
Y. Li, J. Tang, B. Gao, J. Yao, Y. Xi, Y. Li, T. Li, Y. Zhou, Z. Liu, Q. Zhang, S. Qiu, Q. Li, H. Qian, H. Wu, IEEE Int. Electron Devices Meet. 2021, 21, 5.
R. An, Y. Li, J. Tang, B. Gao, Y. Du, J. Yao, Y. Li, W. Sun, H. Zhao, J. Li, Q. Qin, Q. Zhang, S. Qiu, Q. Li, Z. Li, H. Qian, H. Wu, IEEE Int. Electron Devices Meet. 2022, 18, 419.
W. H. Chen, C. Dou, K. X. Li, W. Y. Lin, P. Y. Li, J. H. Huang, J. H. Wang, W. C. Wei, C. X. Xue, Y. C. Chiu, Y. C. King, C. J. Lin, R. S. Liu, C. C. Hsieh, K. T. Tang, J. J. Yang, M. S. Ho, M. F. Chang, Nat. Electron. 2019, 2, 420.
A. S. Sokolov, H. Abbas, Y. Abbas, C. Choi, J. Semicond. 2021, 42, 013101.
W. Zhang, B. Gao, J. Tang, X. Li, W. Wu, H. Qian, H. Wu, Phys. Status Solidi RRL 2019, 13, 1900204.
P. Yao, H. Wu, B. Gao, J. Tang, Q. Zhang, W. Zhang, J. J. Yang, H. Qian, Nature 2020, 577, 641.
C. Li, M. Hu, Y. Li, H. Jiang, N. Ge, E. Montgomery, J. Zhang, W. Song, N. Dávila, C. E. Graves, Z. Li, J. P. Strachan, P. Lin, Z. Wang, M. Barnell, Q. Wu, R. S. Williams, J. J. Yang, Q. Xia, Nat. Electron. 2018, 1, 52.
H. Sunamura, N. Inoue, N. Furutake, S. Saito, M. Narihiro, M. Hane, Y. Hayashi, Symp. VLSI Technol, IEEE, Honolulu, HI, USA 2014, p. 180.
H. Lee, S. Lee, Y. Kim, A. B. Siddik, M. M. Billah, J. Lee, J. Jang, IEEE Electron Device Lett. 2020, 41, 1520.
Y. Kobayashi, D. Matsubayashi, S. Nagatsuka, Y. Yakubo, T. Atsumi, Y. Shionoiri, S. Hondo, T. Yamamoto, Y. Okazaki, M. Nagai, S. Sasagawa, D. Ito, Y. Hata, T. Hamada, R. Arasawa, K. Hanaoka, M. Sakakura, H. Suzawa, Y. Yamamoto, S. Yamazaki, Symp. VLSI Technol, IEEE, Honolulu, HI, USA, 2014 p. 50.
S. Pi, C. Li, H. Jiang, W. Xia, H. Xin, J. J. Yang, Q. Xia, Nat. Nanotechnol. 2019, 14, 35.
U. Chand, M. M. Sabry Aly, M. Lal, C. Chun-Kuei, S. Hooda, S. H. Tsai, Z. Fang, H. Veluri, A. Voon-Yew Thean, VLSI, IEEE, Honolulu, HI, USA 2022, p. 326.
Y. Kang, W. Lee, J. Kim, K. Keum, S. H. Kang, J. W. Jo, S. K. Park, Y. H. Kim, Mater. Res. Bull. 2021, 139, 111252.
S. Y. Park, J. H. Song, C. K. Lee, B. G. Son, C. K. Lee, H. J. Kim, R. Choi, Y. J. Choi, U. K. Kim, C. S. Hwang, H. J. Kim, J. K. Jeong, IEEE Electron Device Lett. 2013, 34, 894.
Y. Wong, S. Chen, S. Mau, C. Sanderson, B. C. Lovell, CVPR, IEEE, Colorado, Springs, CO, USA 2011, p. 74.
S. Choi, J. H. Shin, J. Lee, P. Sheridan, W. D. Lu, Nano Lett. 2017, 17, 3113.
E. Giacomin, T. Greenberg-Toledo, S. Kvatinsky, P. E. Gaillardon, IEEE Trans. Circuits Syst. I: Regul. Pap. 2019, 66, 643.
M. Abedin, A. Roohi, M. Liehr, N. Cady, S. Angizi, IEEE J. Explor. Solid-State Comput. Devices Circuits 2022, 8, 59.
U. Chand, Z. Fang, C. Chun-Kuei, Y. Luo, H. Veluri, M. Sivan, L. J. Feng, S. H. Tsai, X. Wang, S. Chakraborty, E. Zamburg, A. V. Y. Thean, Symp. VLSI Technol. 2021, T10-5.
J. Wu, F. Mo, T. Saraya, T. Hiramoto, M. Kobayashi, Symp. VLSI Technol. T6-2 2020.
W. Wu, H. Wu, B. Gao, P. Yao, X. Zhang, X. Peng, S. Yu, H. Qian, Symp. VLSI Technol, IEEE, Honolulu, HI, USA, 2018, p. 103.
W. Wu, H. Wu, B. Gao, N. Deng, S. Yu, H. Qian, IEEE Electron Device Lett. 2017, 38, 1019.