Resistive switching and battery-like characteristics in highly transparent Ta


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
31 Aug 2023
Historique:
received: 03 05 2023
accepted: 17 08 2023
medline: 1 9 2023
pubmed: 1 9 2023
entrez: 31 8 2023
Statut: epublish

Résumé

Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta

Identifiants

pubmed: 37652968
doi: 10.1038/s41598-023-40891-2
pii: 10.1038/s41598-023-40891-2
pmc: PMC10471767
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

14297

Subventions

Organisme : Science and Engineering Research Board
ID : CRG/2021/001136

Informations de copyright

© 2023. Springer Nature Limited.

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Auteurs

Darshika Khone (D)

Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal University, Gurgaon, 122413, India.

Sandeep Kumar (S)

Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India.

Mohammad Balal (M)

UGC-DAE Consortium for Scientific Research, Indore, 452001, India.

Sudipta Roy Barman (SR)

UGC-DAE Consortium for Scientific Research, Indore, 452001, India.

Sunil Kumar (S)

Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India.

Abhimanyu Singh Rana (AS)

Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal University, Gurgaon, 122413, India. rana.abhimanyu@gmail.com.

Classifications MeSH