Atomically precise vacancy-assembled quantum antidots.
Journal
Nature nanotechnology
ISSN: 1748-3395
Titre abrégé: Nat Nanotechnol
Pays: England
ID NLM: 101283273
Informations de publication
Date de publication:
Dec 2023
Dec 2023
Historique:
received:
03
05
2023
accepted:
01
08
2023
medline:
1
9
2023
pubmed:
1
9
2023
entrez:
31
8
2023
Statut:
ppublish
Résumé
Patterning antidots, which are regions of potential hills that repel electrons, into well-defined antidot lattices creates fascinating artificial periodic structures, leading to anomalous transport properties and exotic quantum phenomena in two-dimensional systems. Although nanolithography has brought conventional antidots from the semiclassical regime to the quantum regime, achieving precise control over the size of each antidot and its spatial period at the atomic scale has remained challenging. However, attaining such control opens the door to a new paradigm, enabling the creation of quantum antidots with discrete quantum hole states, which, in turn, offer a fertile platform to explore novel quantum phenomena and hot electron dynamics in previously inaccessible regimes. Here we report an atomically precise bottom-up fabrication of a series of atomic-scale quantum antidots through a thermal-induced assembly of a chalcogenide single vacancy in PtTe
Identifiants
pubmed: 37653051
doi: 10.1038/s41565-023-01495-z
pii: 10.1038/s41565-023-01495-z
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
1401-1408Subventions
Organisme : Ministry of Education - Singapore (MOE)
ID : MOE2019-T2-2-044
Organisme : Ministry of Education - Singapore (MOE)
ID : MOE-T2EP10221-0005
Organisme : Ministry of Education - Singapore (MOE)
ID : EDUN C-33-18-279-V12, I-FIM
Organisme : Ministry of Education - Singapore (MOE)
ID : MOE-T2EP50121-0008
Organisme : Agency for Science, Technology and Research (A*STAR)
ID : M21K2c0113
Organisme : National Research Foundation Singapore (National Research Foundation-Prime Minister's office, Republic of Singapore)
ID : R-607-265-380-121
Informations de copyright
© 2023. The Author(s), under exclusive licence to Springer Nature Limited.
Références
Fuechsle, M. et al. A single-atom transistor. Nat. Nanotechnol. 7, 242–246 (2012).
Huff, T. et al. Binary atomic silicon logic. Nat. Electron. 1, 636–643 (2018).
Achal, R. et al. Lithography for robust and editable atomic-scale silicon devices and memories. Nat. Commun. 9, 2778 (2018).
Kalff, F. E. et al. A kilobyte rewritable atomic memory. Nat. Nanotechnol. 11, 926–929 (2016).
Amlani, I. et al. Digital logic gate using quantum-dot cellular automata. Science 284, 289–291 (1999).
Imre, A. et al. Majority logic gate for magnetic quantum-dot cellular automata. Science 311, 205–208 (2006).
Kim, D. et al. Quantum control and process tomography of a semiconductor quantum dot hybrid qubit. Nature 511, 70–74 (2014).
Fölsch, S., Martínez-Blanco, J., Yang, J., Kanisawa, K. & Erwin, S. C. Quantum dots with single-atom precision. Nat. Nanotechnol. 9, 505–508 (2014).
Du, A. et al. Dots versus antidots: computational exploration of structure, magnetism, and half-metallicity in boron-nitride nanostructures. J. Am. Chem. Soc. 131, 17354–17359 (2009).
Mitterreiter, E. et al. The role of chalcogen vacancies for atomic defect emission in MoS
Flindt, C., Mortensen, N. A. & Jauho, A.-P. Quantum computing via defect states in two-dimensional antidot lattices. Nano Lett. 5, 2515–2518 (2005).
Pedersen, T. G. et al. Graphene antidot lattices: designed defects and spin qubits. Phys. Rev. Lett. 100, 136804 (2008).
Besteiro, L. V., Kong, X.-T., Wang, Z., Hartland, G. & Govorov, A. O. Understanding hot-electron generation and plasmon relaxation in metal nanocrystals: quantum and classical mechanisms. ACS Photon. 4, 2759–2781 (2017).
Zhang, H. et al. Large-scale mesoscopic transport in nanostructured graphene. Phys. Rev. Lett. 110, 066805 (2013).
Clavero, C. Plasmon-induced hot-electron generation at nanoparticle/metal-oxide interfaces for photovoltaic and photocatalytic devices. Nat. Photon. 8, 95–103 (2014).
Goldman, V. J. & Su, B. Resonant tunneling in the quantum hall regime: measurement of fractional charge. Science 267, 1010–1012 (1995).
Maasilta, I. J. & Goldman, V. J. Tunneling through a coherent ‘quantum antidot molecule’. Phys. Rev. Lett. 84, 1776–1779 (2000).
Sim, H.-S. et al. Coulomb blockade and kondo effect in a quantum Hall antidot. Phys. Rev. Lett. 91, 266801 (2003).
Park, M., Harrison, C., Chaikin, P. M., Register, R. A. & Adamson, D. H. Block copolymer lithography: periodic arrays of ~1011 holes in 1 square centimeter. Science 276, 1401–1404 (1997).
Sinitskii, A. & Tour, J. M. Patterning graphene through the self-assembled templates: toward periodic two-dimensional graphene nanostructures with semiconductor properties. J. Am. Chem. Soc. 132, 14730–14732 (2010).
Sandner, A. et al. Ballistic transport in graphene antidot lattices. Nano Lett. 15, 8402–8406 (2015).
Jessen, B. S. et al. Lithographic band structure engineering of graphene. Nat. Nanotechnol. 14, 340–346 (2019).
Khajetoorians, A. A., Wegner, D., Otte, A. F. & Swart, I. Creating designer quantum states of matter atom-by-atom. Nat. Rev. Phys. 1, 703–715 (2019).
Gomes, K. K., Mar, W., Ko, W., Guinea, F. & Manoharan, H. C. Designer Dirac fermions and topological phases in molecular graphene. Nature 483, 306–310 (2012).
Slot, M. R. et al. Experimental realization and characterization of an electronic Lieb lattice. Nat. Phys. 13, 672–676 (2017).
Kempkes, S. N. et al. Design and characterization of electrons in a fractal geometry. Nat. Phys. 15, 127–131 (2019).
Drost, R., Ojanen, T., Harju, A. & Liljeroth, P. Topological states in engineered atomic lattices. Nat. Phys. 13, 668–671 (2017).
Xu, J. et al. Quantum antidot formation and correlation to optical shift of gold nanoparticles embedded in MgO. Phys. Rev. Lett. 88, 175502 (2002).
Liu, Y., Xu, F., Zhang, Z., Penev, E. S. & Yakobson, B. I. Two-dimensional mono-elemental semiconductor with electronically inactive defects: the case of phosphorus. Nano Lett. 14, 6782–6786 (2014).
Nguyen, G. D. et al. 3D imaging and manipulation of subsurface selenium vacancies in PdSe
Liu, M., Nam, H., Kim, J., Fiete, G. A. & Shih, C.-K. Influence of nanosize hole defects and their geometric arrangements on the superfluid density in atomically thin single crystals of indium superconductor. Phys. Rev. Lett. 127, 127003 (2021).
Li, X. et al. Ordered clustering of single atomic Te vacancies in atomically thin PtTe
Zhussupbekov, K. et al. Imaging and identification of point defects in PtTe
Leo, G., Fabian, M., Nikolaj, M., Peter, L. & Gerhard, M. The chemical structure of a molecule resolved by atomic force microscopy. Science 325, 1110–1114 (2009).
Barja, S. et al. Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides. Nat. Commun. 10, 3382 (2019).
Schuler, B. et al. How substitutional point defects in two-dimensional WS
Cochrane, K. A. et al. Spin-dependent vibronic response of a carbon radical ion in two-dimensional WS
Guo, G. Y. & Liang, W. Y. The electronic structures of platinum dichalcogenides: PtS
Aghajanian, M. et al. Resonant and bound states of charged defects in two-dimensional semiconductors. Phys. Rev. B 101, 081201 (2020).
Fang, H. et al. Electronic self-passivation of single vacancy in black phosphorus via ionization. Phys. Rev. Lett. 128, 176801 (2022).
Schuler, B. et al. Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS
Gross, L. et al. Investigating atomic contrast in atomic force microscopy and Kelvin probe force microscopy on ionic systems using functionalized tips. Phys. Rev. B 90, 155455 (2014).
Cai, Y., Ke, Q., Zhang, G., Yakobson, B. I. & Zhang, Y.-W. Highly itinerant atomic vacancies in phosphorene. J. Am. Chem. Soc. 138, 10199–10206 (2016).
Trevethan, T., Latham, C. D., Heggie, M. I., Briddon, P. R. & Rayson, M. J. Vacancy diffusion and coalescence in graphene directed by defect strain fields. Nanoscale 6, 2978–2986 (2014).
Ishizuka, H. & Nagaosa, N. Spin chirality induced skew scattering and anomalous Hall effect in chiral magnets. Sci. Adv. 4, eaap9962 (2018).
Fujishiro, Y. et al. Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet. Nat. Commun. 12, 317 (2021).
Arh, T. et al. The Ising triangular-lattice antiferromagnet neodymium heptatantalate as a quantum spin liquid candidate. Nat. Mater. 21, 416–422 (2022).
Bezanson, J., Edelman, A., Karpinski, S. & Shah, V. B. Julia: a fresh approach to numerical computing. SIAM Rev. 59, 65–98 (2017).
Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).
Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994).
Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).
Moellmann, J. & Grimme, S. DFT-D3 study of some molecular crystals. J. Phys. Chem. C 118, 7615–7621 (2014).
Henkelman, G., Uberuaga, B. P. & Jónsson, H. A climbing image nudged elastic band method for finding saddle points and minimum energy paths. J. Chem. Phys. 113, 9901–9904 (2000).
Giannozzi, P. et al. QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. J. Phys. Condens. Matter 21, 395502 (2009).
Giannozzi, P. et al. Advanced capabilities for materials modelling with Quantum ESPRESSO. J. Phys. Condens. Matter 29, 465901 (2017).
Dal Corso, A. Pseudopotentials periodic table: from H to Pu. Comput. Mater. Sci. 95, 337–350 (2014).