Resolidified Chalcogen-Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders.
bilayer semiconductors
chemical vapor deposition
electrical property
stacking order
sulfur concentration
Journal
Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338
Informations de publication
Date de publication:
03 Sep 2023
03 Sep 2023
Historique:
revised:
14
08
2023
received:
02
07
2023
medline:
4
9
2023
pubmed:
4
9
2023
entrez:
4
9
2023
Statut:
aheadofprint
Résumé
Bilayer semiconductors have attracted much attention due to their stacking-order-dependent properties. However, as both 3R- and 2H-stacking are energetically stable at high temperatures, most of the high-temperature grown bilayer materials have random 3R- or 2H-stacking orders, leading to non-uniformity in optical and electrical properties. Here, a chemical vapor deposition method is developed to grow bilayer semiconductors with controlled stacking order by modulating the resolidified chalcogen precursors supply kinetics. Taking tungsten disulfide (WS
Identifiants
pubmed: 37661344
doi: 10.1002/smll.202305506
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2305506Subventions
Organisme : National Science Foundation of China for Distinguished Young Scholars
ID : 52125309
Organisme : National Natural Science Foundation of China
ID : 51991343
Organisme : National Natural Science Foundation of China
ID : 51991340
Organisme : National Natural Science Foundation of China
ID : 51920105002
Organisme : National Natural Science Foundation of China
ID : 52188101
Organisme : National Natural Science Foundation of China
ID : 52202043
Organisme : Guangdong Innovative and Entrepreneurial Research Team Program
ID : 2017ZT07C341
Organisme : Shenzhen Basic Research Project
ID : JCYJ20200109144616617
Organisme : Shenzhen Basic Research Project
ID : JCYJ20220818101014029
Organisme : Shenzhen Basic Research Project
ID : JCYJ20220818101014029
Organisme : Tsinghua Shenzhen International Graduate School-Shenzhen Pengrui Young Faculty Program of Shenzhen Pengrui Foundation
ID : SZPR2023002
Informations de copyright
© 2023 Wiley-VCH GmbH.
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