Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
07 Sep 2023
07 Sep 2023
Historique:
received:
13
04
2023
accepted:
25
08
2023
medline:
8
9
2023
pubmed:
8
9
2023
entrez:
7
9
2023
Statut:
epublish
Résumé
In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy, and various substrate temperatures raging from 200 to 400 °C. The structural and optical properties of GaN films as a function of substrate temperature are investigate. XRD studies reveal that the GaN films deposited on porous silicon are nanocrystalline with a hexagonal wurtzite structure along (002) plane. The photoluminescence emission peaks of the GaN/PSi prepared at 300 °C substrate temperature are located at 368 nm and 728 nm corresponding to energy gap of 3.36 eV and 1.7 eV, respectively. The GaN/PSi heterojunction photodetector prepared at 300 °C exhibits the maximum performance, with a responsivity of 29.03 AW
Identifiants
pubmed: 37679411
doi: 10.1038/s41598-023-41396-8
pii: 10.1038/s41598-023-41396-8
pmc: PMC10485076
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
14746Subventions
Organisme : Deanship of Scientific Research at Northern Border University, Arar, KSA
ID : NBU-FFR-2023-0048
Informations de copyright
© 2023. Springer Nature Limited.
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