A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits.
Circuit model
flexible electronics
indium gallium zinc oxide (IGZO)
thin film transistors (TFTs)
Journal
IEEE transactions on electron devices
ISSN: 0018-9383
Titre abrégé: IEEE Trans Electron Devices
Pays: United States
ID NLM: 0422675
Informations de publication
Date de publication:
Sep 2023
Sep 2023
Historique:
medline:
8
9
2023
pubmed:
8
9
2023
entrez:
8
9
2023
Statut:
ppublish
Résumé
We report a new physics-based model for dual-gate amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) which we developed and fine-tuned through experimental implementation and benchtop characterization. We fabricated and characterized a variety of test patterns, including a-IGZO TFTs with varying gate widths (100-1000
Identifiants
pubmed: 37680851
doi: 10.1109/ted.2023.3284803
pmc: PMC10484473
mid: NIHMS1922561
doi:
Types de publication
Journal Article
Langues
eng
Pagination
4647-4654Subventions
Organisme : NIBIB NIH HHS
ID : DP2 EB029757
Pays : United States
Organisme : NINDS NIH HHS
ID : R01 NS123655
Pays : United States
Organisme : NINDS NIH HHS
ID : UG3 NS123723
Pays : United States
Références
Nat Nanotechnol. 2013 Aug;8(8):549-55
pubmed: 23912107
Sci Adv. 2020 Nov 13;6(46):
pubmed: 33188031
Sensors (Basel). 2019 Jan 09;19(2):
pubmed: 30634474
Adv Mater Technol. 2021 Aug;6(8):
pubmed: 34485683
Nature. 2004 Nov 25;432(7016):488-92
pubmed: 15565150
Nat Neurosci. 2011 Nov 13;14(12):1599-605
pubmed: 22081157
RSC Adv. 2018 Feb 1;8(10):5622-5628
pubmed: 35542402
Nat Mater. 2010 Jun;9(6):511-7
pubmed: 20400953
Materials (Basel). 2018 Dec 09;11(12):
pubmed: 30544867