Mask and plate: a scalable front metallization with low-cost potential for III-V-based tandem solar cells enabling 31.6 % conversion efficiency.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
21 Sep 2023
21 Sep 2023
Historique:
received:
29
06
2023
accepted:
10
09
2023
medline:
22
9
2023
pubmed:
22
9
2023
entrez:
22
9
2023
Statut:
epublish
Résumé
Low-cost approaches for mass production of III-V-based photovoltaics are highly desired today. For the first time, this work presents industrially relevant mask and plate for front metallization of III-V-based solar cells replacing expensive photolithography. Metal contacts are fabricated by nickel (Ni) electroplating directly onto the solar cell's front using a precisely structured mask. Inkjet printing offers low-cost and high-precision processing for application of an appropriate plating resist. It covers the solar cell's front side with narrow openings for subsequent electroplating. The width of the resulting Ni contacts is as low as (10.5 ± 0.8) µm with sharp edges and homogenous shape. The 4 cm
Identifiants
pubmed: 37735612
doi: 10.1038/s41598-023-42407-4
pii: 10.1038/s41598-023-42407-4
pmc: PMC10514186
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
15745Subventions
Organisme : Bundesministerium für Wirtschaft und Klimaschutz
ID : 03EE1044B
Informations de copyright
© 2023. Springer Nature Limited.
Références
Yamaguchi, M., Dimroth, F., Geisz, J. F. & Ekins-Daukes, N. J. Multi-junction solar cells paving the way for super high-efficiency. J. Appl. Phys. 129, 240901. https://doi.org/10.1063/5.0048653 (2021).
Li, J. et al. A brief review of high efficiency III–V solar cells for space application. Front. Phys. 8, 631925. https://doi.org/10.3389/fphy.2020.631925 (2021).
Horowitz, K. A. W., Remo, T., Smith, B. & Ptak, A. A techno-economic analysis and cost reduction roadmap for III–V solar cells (National Renewable Energy Laboratory, 2018).
Shockley, W. & Queisser, H. J. Detailed balance limit of efficiency of p-n junction solar cells. J. Appl. Phys. 32, 510–519. https://doi.org/10.1063/1.1736034 (1961).
doi: 10.1063/1.1736034
Green, M. A. et al. Solar cell efficiency tables (version 61). Prog. Photovolt. Res. Appl. 31, 3–16. https://doi.org/10.1002/pip.3646 (2023).
doi: 10.1002/pip.3646
Baur, C. et al. Triple-junction III–V based concentrator solar cells: perspectives and challenges. J. Sol.Energy Eng. 129, 258–265. https://doi.org/10.1115/1.2735346 (2007).
doi: 10.1115/1.2735346
Cariou, R. et al. III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration. Nat. Energy 3, 326–333. https://doi.org/10.1038/s41560-018-0125-0 (2018).
doi: 10.1038/s41560-018-0125-0
Lackner, D. et al. Two‐terminal direct wafer‐bonded GaInP/AlGaAs//Si triple‐junction solar cell with AM1.5g efficiency of 34.1%. Sol. RRL 4, 2000210. https://doi.org/10.1002/solr.202000210 (2020).
Schygulla, P. et al. Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g. Prog. Photovolt. Res. Appl. 30, 869–879. https://doi.org/10.1002/pip.3503 (2021).
Feifel, M. et al. Direct growth of III–V/silicon triple-junction solar cells with 19.7% efficiency. IEEE J. Photovoltaics 8, 1590–1595. https://doi.org/10.1109/JPHOTOV.2018.2868015 (2018).
Heitmann, U. et al. Challenges in the fabrication of a glued III–V on Si tandem solar cell using a ZnO-based TCA. In 2021 IEEE 48
Lang, R., Schon, J., Dimroth, F. & Lackner, D. Optimization of GaAs solar cell performance and growth efficiency at MOVPE growth rates of 100 μm/h. IEEE J. Photovoltaics 8, 1596–1600. https://doi.org/10.1109/JPHOTOV.2018.2868021 (2018).
doi: 10.1109/JPHOTOV.2018.2868021
Lang, R., Habib, F., Dauelsberg, M., Dimroth, F. & Lackner, D. MOVPE growth of GaAs with growth rates up to 280 µm/h. J. Cryst. Growth 537, 125601. https://doi.org/10.1016/j.jcrysgro.2020.125601 (2020).
Schube, J. et al. Printed and Plated Front Side Metal Contacts for III–V/Si Tandem Solar Cells. 2nd tandemPV workshop (2022).
Hayati-Roodbari, N., Wheeldon, A., Fian, A. & Trattnig, R. 1,8‐octanedithiol as an effective intermediate layer for deposition of Cu electrodes via inkjet printing and laser sintering on III–V triple‐junction solar cells. Phys. Status Solidi (a) 219, 2200089. https://doi.org/10.1002/pssa.202200089 (2022).
Hermans, J. et al. Inkjet printing of Ag nanoparticle inks for heterojunction solar cell metallization. SNEC PV Power Expo. (2015).
Descoeudres, A. et al. Low-temperature processes for passivation and metallization of high-efficiency crystalline silicon solar cells. Sol. Energy 175, 54–59. https://doi.org/10.1016/j.solener.2018.01.074 (2018).
doi: 10.1016/j.solener.2018.01.074
Stüwe, D., Mager, D., Biro, D. & Korvink, J. G. Inkjet technology for crystalline silicon photovoltaics. Adv. Mater. 27, 599–626. https://doi.org/10.1002/adma.201403631 (2015).
doi: 10.1002/adma.201403631
pubmed: 25482823
Dullweber, T. & Tous, L. (eds.) Silicon solar cell metallization and module technology (The Institution of Engineering and Technology, 2021).
Geissbuhler, J. et al. Silicon heterojunction solar cells with copper-plated grid electrodes: Status and comparison with silver thick-film techniques. IEEE J. Photovoltaics 4, 1055–1062. https://doi.org/10.1109/JPHOTOV.2014.2321663 (2014).
doi: 10.1109/JPHOTOV.2014.2321663
Cardarelli, F. Materials handbook. A concise desktop reference, 2nd ed. (Springer, 2008).
Blakemore, J. S. Semiconducting and other major properties of gallium arsenide. J. Appl. Phys. 53, 123–181. https://doi.org/10.1063/1.331665 (1982).
doi: 10.1063/1.331665
Kluska, S. et al. Plated TOPCon solar cells & modules with reliable fracture stress and soldered module interconnection. EPJ Photovolt. 12, 10. https://doi.org/10.1051/epjpv/2021010 (2021).
doi: 10.1051/epjpv/2021010
Steiner, M., Philipps, S. P., Hermle, M., Bett, A. W. & Dimroth, F. Validated front contact grid simulation for GaAs solar cells under concentrated sunlight. Prog. Photovolt. Res. Appl. 19, 73–83. https://doi.org/10.1002/pip.989 (2011).
doi: 10.1002/pip.989
Wang, L. C., Hao, P. H., Cheng, J. Y., Deng, F. & Lau, S. S. Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C. J. Appl. Phys. 79, 4216. https://doi.org/10.1063/1.361789 (1996).
doi: 10.1063/1.361789
Verma, D. & Fahr, A. Confocal laser scanning microscopy in Percutaneous penetration enhancers, 2
Goldstein, J. I. Scanning electron microscopy and x-ray microanalysis, 3
Takahashi, H. et al. A new method of surface preparation for high spatial resolution EPMA/SEM with an argon ion beam. Microchim. Acta 155, 295–300. https://doi.org/10.1007/s00604-006-0559-0 (2006).
doi: 10.1007/s00604-006-0559-0
Schroder, D. K. Semiconductor material and device characterization (IEEE Press Wiley-Interscience, 2006).
Berger, H. C. & resistance on diffused resistors.,. IEEE international solid-state circuits conference. Dig. Tech. Papers 160–161, 1969. https://doi.org/10.1109/ISSCC.1969.1154702 (1969).
doi: 10.1109/ISSCC.1969.1154702
Murrmann, H. & Widmann, D. Messung des Übergangswiderstandes zwischen Metall und Diffusionsschicht in Si-Planarelementen. Solid-State Electron. 12, 879–886. https://doi.org/10.1016/0038-1101(69)90045-8 (1969).
doi: 10.1016/0038-1101(69)90045-8
Shockley, W., Götzberger, A. & Scarlett, R. M. Theory and experiments on current transfer from alloyed contact to diffused layer. Appendix B of “Research and investigation of inverse epitaxial UHF power transistors (Shockley Res. Lab., 1964).
Siefer, G., Gandy, T., Schachtner, M., Wekkeli, A. & Bett, A. W. Improved grating monochromator set-up for EQE measurements of multi-junction solar cells. In 2013 IEEE 39
Meusel, M., Adelhelm, R., Dimroth, F., Bett, A. W. & Warta, W. Spectral mismatch correction and spectrometric characterization of monolithic III–V multi-junction solar cells. Prog. Photovolt. Res. Appl. 10, 243–255. https://doi.org/10.1002/pip.407 (2002).
doi: 10.1002/pip.407