Surface engineering of two-dimensional hexagonal boron-nitride for optoelectronic devices.


Journal

Nanoscale
ISSN: 2040-3372
Titre abrégé: Nanoscale
Pays: England
ID NLM: 101525249

Informations de publication

Date de publication:
05 Oct 2023
Historique:
pubmed: 25 9 2023
medline: 25 9 2023
entrez: 25 9 2023
Statut: epublish

Résumé

Two-dimensional hexagonal boron nitride (2D h-BN) is being extensively studied in optoelectronic devices due to its electronic and photonic properties. However, the controlled optimization of h-BN's insulating properties is necessary to fully explore its potential in energy conversion and storage devices. In this work, we engineered the surface of h-BN nanoflakes

Identifiants

pubmed: 37743729
doi: 10.1039/d3nr03864e
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

15810-15830

Auteurs

Gurpreet Singh Selopal (GS)

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China. zhmwang@uestc.edu.cn.
Department of Engineering, Faculty of Agriculture, Dalhousie University, Truro, B2N 5E3, NS, Canada. gs.selopal@dal.ca.
Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Omar Abdelkarim (O)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Jasneet Kaur (J)

Department of Chemical Engineering, Faculty of Engineering & Architectural Science, Toronto Metropolitan University, Toronto, M5B 2K3, ON, Canada.
Department of Physics and Yousef Haj-Ahmad Department of Engineering, Faculty of Mathematics and Science, Brock University, 1812 Sir Isaac Brock Way, St. Catharines L2S 3A1, ON, Canada.

Jiabin Liu (J)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Lei Jin (L)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Zhangsen Chen (Z)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Fabiola Navarro-Pardo (F)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Sergei Manzhos (S)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Shuhui Sun (S)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Aycan Yurtsever (A)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Hadis Zarrin (H)

Department of Chemical Engineering, Faculty of Engineering & Architectural Science, Toronto Metropolitan University, Toronto, M5B 2K3, ON, Canada.

Zhiming M Wang (ZM)

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China. zhmwang@uestc.edu.cn.
Institute for Advanced Study, Chengdu University, Chengdu, Sichuan, 610106, P. R. China.

Federico Rosei (F)

Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, 1650 Boul. Lionel Boulet, Varennes, J3X 1P7, QC, Canada. federico.rosei@inrs.ca.

Classifications MeSH