Addressing the Impact of Surface Roughness on Epsilon-Near-Zero Silicon Carbide Substrates.
Journal
ACS photonics
ISSN: 2330-4022
Titre abrégé: ACS Photonics
Pays: United States
ID NLM: 101634366
Informations de publication
Date de publication:
20 Sep 2023
20 Sep 2023
Historique:
received:
11
04
2023
medline:
25
9
2023
pubmed:
25
9
2023
entrez:
25
9
2023
Statut:
epublish
Résumé
Epsilon-near-zero (ENZ) media have been very actively investigated due to their unconventional wave phenomena and strengthened nonlinear response. However, the technological impact of ENZ media will be determined by the quality of realistic ENZ materials, including material loss and surface roughness. Here, we provide a comprehensive experimental study of the impact of surface roughness on ENZ substrates. Using silicon carbide (SiC) substrates with artificially induced roughness, we analyze samples whose roughness ranges from a few to hundreds of nanometer size scales. It is concluded that ENZ substrates with roughness in the few nanometer scale are negatively affected by coupling to longitudinal phonons and strong ENZ fields normal to the surface. On the other hand, when the roughness is in the hundreds of nanometers scale, the ENZ band is found to be more robust than dielectric and surface phonon polariton (SPhP) bands.
Identifiants
pubmed: 37743935
doi: 10.1021/acsphotonics.3c00476
pmc: PMC10515697
doi:
Types de publication
Journal Article
Langues
eng
Pagination
3105-3114Informations de copyright
© 2023 The Authors. Published by American Chemical Society.
Déclaration de conflit d'intérêts
The authors declare no competing financial interest.
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